5秒后页面跳转
IRFR3704ZPBF PDF预览

IRFR3704ZPBF

更新时间: 2024-11-20 04:18:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
12页 267K
描述
HEXFET Power MOSFET

IRFR3704ZPBF 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:LEAD FREE, PLASTIC, DPAK-3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.09
Is Samacsys:N雪崩能效等级(Eas):41 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):60 A
最大漏极电流 (ID):30 A最大漏源导通电阻:0.0084 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):48 W最大脉冲漏极电流 (IDM):240 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFR3704ZPBF 数据手册

 浏览型号IRFR3704ZPBF的Datasheet PDF文件第2页浏览型号IRFR3704ZPBF的Datasheet PDF文件第3页浏览型号IRFR3704ZPBF的Datasheet PDF文件第4页浏览型号IRFR3704ZPBF的Datasheet PDF文件第5页浏览型号IRFR3704ZPBF的Datasheet PDF文件第6页浏览型号IRFR3704ZPBF的Datasheet PDF文件第7页 
PD - 95442A  
IRFR3704ZPbF  
IRFU3704ZPbF  
Applications  
HEXFET® Power MOSFET  
l High Frequency Synchronous Buck  
Converters for Computer Processor Power  
l High Frequency Isolated DC-DC  
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
l Lead-Free  
VDSS RDS(on) max  
Qg  
8.4m  
20V  
9.3nC  
Benefits  
l Very Low RDS(on) at 4.5V VGS  
l Ultra-Low Gate Impedance  
l Fully Characterized Avalanche Voltage  
and Current  
D-Pak  
IRFR3704Z  
I-Pak  
IRFU3704Z  
Absolute Maximum Ratings  
Parameter  
Max.  
20  
Units  
VDS  
V
Drain-to-Source Voltage  
V
± 20  
60  
Gate-to-Source Voltage  
GS  
I
I
I
@ TC = 25°C  
A
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
D
D
@ TC = 100°C  
42  
240  
48  
DM  
P
P
@TC = 25°C  
@TC = 100°C  
W
Maximum Power Dissipation  
Maximum Power Dissipation  
Linear Derating Factor  
D
D
24  
0.32  
W/°C  
°C  
T
-55 to + 175  
Operating Junction and  
J
T
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
STG  
300 (1.6mm from case)  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
3.1  
Units  
Rθ  
°C/W  
JC  
JA  
JA  
Junction-to-Case  
Rθ  
Rθ  
50  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
110  
Notes  through are on page 11  
www.irf.com  
1
12/03/04  

IRFR3704ZPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFR3704ZTRPBF INFINEON

类似代替

High Frequency Synchronous Buck Converters for Computer Processor Power
IRFR3704ZTRLPBF INFINEON

类似代替

Power Field-Effect Transistor, 30A I(D), 20V, 0.0084ohm, 1-Element, N-Channel, Silicon, Me
IRFR3704Z INFINEON

功能相似

HEXFET Power MOSFET

与IRFR3704ZPBF相关器件

型号 品牌 获取价格 描述 数据表
IRFR3704ZPBF_15 INFINEON

获取价格

High Frequency Synchronous Buck Converters for Computer Processor Power
IRFR3704ZTRLPBF INFINEON

获取价格

Power Field-Effect Transistor, 30A I(D), 20V, 0.0084ohm, 1-Element, N-Channel, Silicon, Me
IRFR3704ZTRPBF INFINEON

获取价格

High Frequency Synchronous Buck Converters for Computer Processor Power
IRFR3706 INFINEON

获取价格

Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id
IRFR3706 KERSEMI

获取价格

SMPS MOSFET
IRFR3706C KERSEMI

获取价格

SMPS MOSFET
IRFR3706CPBF KERSEMI

获取价格

High Frequency Isolated DC-DC Converters
IRFR3706CPBF INFINEON

获取价格

SMPS MOSFET
IRFR3706CTRLPBF INFINEON

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFR3706CTRR KERSEMI

获取价格

High Frequency Isolated DC-DC Converters