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IRFR3707TRL PDF预览

IRFR3707TRL

更新时间: 2024-11-05 22:59:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 139K
描述
MOSFET N-CH 30V 61A DPAK

IRFR3707TRL 数据手册

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PD - 93934B  
IRFR3707  
IRFU3707  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
l High Frequency DC-DC Isolated  
Converters with Synchronous Rectification  
for Telecom and Industrial use  
VDSS  
30V  
RDS(on) max  
ID  
61A  
„
13mΩ  
l High Frequency Buck Converters for  
Computer Processor Power  
Benefits  
l Ultra-Low RDS(on)  
l Very Low Gate Impedance  
l Fully Characterized Avalanche Voltage  
and Current  
D-Pak  
IRFR3707  
I-Pak  
IRFU3707  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
VDS  
Drain-Source Voltage  
30  
± 20  
61 „  
51 „  
244  
87  
V
VGS  
Gate-to-Source Voltage  
V
ID @ TC = 25°C  
ID @ TC = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
A
PD @TC = 25°C  
PD @TC = 70°C  
Maximum Power Dissipationƒ  
Maximum Power Dissipationƒ  
Linear Derating Factor  
W
W
61  
0.59  
mW/°C  
°C  
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to + 175  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
Max.  
1.73  
50  
Units  
RθJC  
RθJA  
RθJA  
–––  
–––  
–––  
Junction-to-Ambient (PCB mount)*  
Junction-to-Ambient  
°C/W  
110  
*
When mounted on 1" square PCB (FR-4 or G-10 Material) .  
For recommended footprint and soldering techniques refer to application note #AN-994  
Notes  through „are on page 9  
www.irf.com  
1
8/22/00  

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