5秒后页面跳转
IRFR3707PBF PDF预览

IRFR3707PBF

更新时间: 2024-01-12 10:56:22
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 221K
描述
HEXFET㈢ Power MOSFET

IRFR3707PBF 数据手册

 浏览型号IRFR3707PBF的Datasheet PDF文件第2页浏览型号IRFR3707PBF的Datasheet PDF文件第3页浏览型号IRFR3707PBF的Datasheet PDF文件第4页浏览型号IRFR3707PBF的Datasheet PDF文件第5页浏览型号IRFR3707PBF的Datasheet PDF文件第6页浏览型号IRFR3707PBF的Datasheet PDF文件第7页 
PD - 95019A  
IRFR3707PbF  
IRFRU3707PbF  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
l High Frequency DC-DC Isolated  
Converters with Synchronous Rectification  
for Telecom and Industrial use  
VDSS  
30V  
RDS(on) max  
ID  
61A  
„
13mΩ  
l High Frequency Buck Converters for  
Computer Processor Power  
l Lead-Free  
Benefits  
l Ultra-Low RDS(on)  
l Very Low Gate Impedance  
l Fully Characterized Avalanche Voltage  
and Current  
D-Pak  
IRFR3707  
I-Pak  
IRFU3707  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
VDS  
Drain-Source Voltage  
30  
± 20  
61 „  
51 „  
244  
87  
V
VGS  
Gate-to-Source Voltage  
V
ID @ TC = 25°C  
ID @ TC = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Maximum Power Dissipationƒ  
Maximum Power Dissipationƒ  
Linear Derating Factor  
A
PD @TC = 25°C  
PD @TC = 70°C  
W
W
61  
0.59  
mW/°C  
°C  
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to + 175  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
Max.  
1.73  
50  
Units  
RθJC  
RθJA  
RθJA  
–––  
–––  
–––  
Junction-to-Ambient (PCB mount)*  
Junction-to-Ambient  
°C/W  
110  
*
When mounted on 1" square PCB (FR-4 or G-10 Material) .  
For recommended footprint and soldering techniques refer to application note #AN-994  
Notes  through „ are on page 9  
www.irf.com  
1
12/13/04  

与IRFR3707PBF相关器件

型号 品牌 获取价格 描述 数据表
IRFR3707TR INFINEON

获取价格

Power Field-Effect Transistor, 30A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Met
IRFR3707TRL INFINEON

获取价格

MOSFET N-CH 30V 61A DPAK
IRFR3707TRLPBF INFINEON

获取价格

Power Field-Effect Transistor, 30A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Met
IRFR3707TRPBF INFINEON

获取价格

Power Field-Effect Transistor, 30A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Met
IRFR3707TRR INFINEON

获取价格

MOSFET N-CH 30V 61A DPAK
IRFR3707Z INFINEON

获取价格

HEXFET Power MOSFET
IRFR3707ZCPBF KERSEMI

获取价格

High Frequency Synchronous Buck Converters for Computer Processor Power
IRFR3707ZCPBF INFINEON

获取价格

HEXFET Power MOSFET
IRFR3707ZCTRPBF INFINEON

获取价格

Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Me
IRFR3707ZCTRRPBF INFINEON

获取价格

Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Me