Datasheet > IRFR3706CTRLPBF

IRFR3706CTRLPBF

更新时间： 2024-11-09 19:46:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	254K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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数据手册

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IRFR3706CTRLPBF 数据手册

PD - 96065

IRFR3706CPbF

IRFU3706CPbF

SMPS MOSFET

Applications

l High Frequency Isolated DC-DC

HEXFET^®Power MOSFET

Converters with Synchronous Rectification

for Telecom and Industrial Use

l High Frequency Buck Converters for

Computer Processor Power

V_DSS

20V

R_DS(on)max

I_D

75A

9.0mΩ

l Lead-Free

Benefits

l Ultra-Low Gate Impedance

l Very Low RDS(on) at 4.5V V_GS

l Fully Characterized Avalanche Voltage

and Current

D-Pak

IRFR3706CPbF

I-Pak

IRFU3706CPbF

Absolute Maximum Ratings

Symbol

V_DS

Parameter

Drain-Source Voltage

Max.

Units

V_GS

Gate-to-Source Voltage

± 12

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

280

P_D@T_C= 25°C

P_D@T_C= 100°C

Maximum Power Dissipation

Linear Derating Factor

0.59

mW/°C

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 175

Thermal Resistance

Parameter

Junction-to-Caseꢀ

Junction-to-Ambient (PCB mount)*ꢀ

Junction-to-Ambientꢀ

Typ.

–––

Max.

1.7

Units

R_θJC

R_θJA

°C/W

110

When mounted on 1" square PCB (FR-4 or G-10 Material) .

For recommended footprint and soldering techniques refer to application note #AN-994

Notes through ꢀ are on page 10

www.irf.com

06/02/06

12 3 4 5 6 7...11

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与IRFR3706CTRLPBF相关器件

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IRFR3706CTRR	KERSEMI	获取价格	High Frequency Isolated DC-DC Converters
IRFR3706CTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFR3706PBF	KERSEMI	获取价格	SMPS MOSFET
IRFR3706PBF	INFINEON	获取价格	SMPS MOSFET
IRFR3706TR	INFINEON	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 20V V(BR)DSS \| 75A I(D) \| TO-252AA
IRFR3706TRL	INFINEON	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 20V V(BR)DSS \| 75A I(D) \| TO-252AA
IRFR3706TRL	KERSEMI	获取价格	SMPS MOSFET
IRFR3706TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Met
IRFR3706TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Met
IRFR3706TRR	INFINEON	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 20V V(BR)DSS \| 75A I(D) \| TO-252AA