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IRFR3706CTRLPBF PDF预览

IRFR3706CTRLPBF

更新时间: 2024-11-20 19:46:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 254K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

IRFR3706CTRLPBF 数据手册

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PD - 96065  
IRFR3706CPbF  
IRFU3706CPbF  
SMPS MOSFET  
Applications  
l High Frequency Isolated DC-DC  
HEXFET® Power MOSFET  
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
l High Frequency Buck Converters for  
Computer Processor Power  
VDSS  
20V  
RDS(on) max  
ID  
75A  
„
9.0mΩ  
l Lead-Free  
Benefits  
l Ultra-Low Gate Impedance  
l Very Low RDS(on) at 4.5V VGS  
l Fully Characterized Avalanche Voltage  
and Current  
D-Pak  
IRFR3706CPbF  
I-Pak  
IRFU3706CPbF  
Absolute Maximum Ratings  
Symbol  
VDS  
Parameter  
Drain-Source Voltage  
Max.  
20  
Units  
V
VGS  
Gate-to-Source Voltage  
± 12  
V
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
75 „  
53 „  
280  
A
PD @TC = 25°C  
PD @TC = 100°C  
Maximum Power Dissipationƒ  
Maximum Power Dissipationƒ  
Linear Derating Factor  
88  
W
W
44  
0.59  
mW/°C  
°C  
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to + 175  
Thermal Resistance  
Parameter  
Junction-to-Caseꢀ  
Junction-to-Ambient (PCB mount)*ꢀ  
Junction-to-Ambientꢀ  
Typ.  
–––  
–––  
–––  
Max.  
1.7  
Units  
RθJC  
RθJA  
RθJA  
50  
°C/W  
110  
*
When mounted on 1" square PCB (FR-4 or G-10 Material) .  
For recommended footprint and soldering techniques refer to application note #AN-994  
Notes  through are on page 10  
www.irf.com  
1
06/02/06  

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