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IRFR3706TRPBF PDF预览

IRFR3706TRPBF

更新时间: 2024-11-24 12:58:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 134K
描述
Power Field-Effect Transistor, 30A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

IRFR3706TRPBF 数据手册

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PD - 93936A  
IRFR3706  
IRFU3706  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
l High Frequency Isolated DC-DC  
VDSS  
RDS(on) max  
ID  
„
20V  
9.0mΩ  
75A  
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
l High Frequency Buck Converters for  
Computer Processor Power  
Benefits  
l Ultra-Low Gate Impedance  
l Very Low RDS(on) at 4.5V VGS  
l Fully Characterized Avalanche Voltage  
and Current  
D-Pak  
IRFR3706  
I-Pak  
IRFU3706  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
VDS  
Drain-Source Voltage  
20  
V
VGS  
Gate-to-Source Voltage  
± 12  
75 „  
53 „  
280  
88  
V
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Maximum Power Dissipationƒ  
Maximum Power Dissipationƒ  
Linear Derating Factor  
A
PD @TC = 25°C  
PD @TC = 100°C  
W
W
44  
0.59  
mW/°C  
°C  
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to + 175  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
–––  
–––  
Max.  
1.7  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Ambient (PCB mount)*  
Junction-to-Ambient  
50  
°C/W  
110  
*
When mounted on 1" square PCB (FR-4 or G-10 Material) .  
For recommended footprint and soldering techniques refer to application note #AN-994  
Notes  through „are on page 10  
www.irf.com  
1
7/6/00  

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