5秒后页面跳转
IRFR3707Z PDF预览

IRFR3707Z

更新时间: 2024-02-18 02:12:49
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 214K
描述
HEXFET Power MOSFET

IRFR3707Z 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
风险等级:5.63雪崩能效等级(Eas):42 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):30 A
最大漏源导通电阻:0.0095 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):220 A
表面贴装:YES端子面层:NOT SPECIFIED
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFR3707Z 数据手册

 浏览型号IRFR3707Z的Datasheet PDF文件第2页浏览型号IRFR3707Z的Datasheet PDF文件第3页浏览型号IRFR3707Z的Datasheet PDF文件第4页浏览型号IRFR3707Z的Datasheet PDF文件第5页浏览型号IRFR3707Z的Datasheet PDF文件第6页浏览型号IRFR3707Z的Datasheet PDF文件第7页 
PD - 94648  
IRFR3707Z  
IRFU3707Z  
HEXFET® Power MOSFET  
Applications  
l High Frequency Synchronous Buck  
Converters for Computer Processor Power  
l High Frequency Isolated DC-DC  
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
VDSS RDS(on) max  
Qg  
9.6nC  
9.5m:  
30V  
Benefits  
l Very Low RDS(on) at 4.5V VGS  
l Ultra-Low Gate Impedance  
l Fully Characterized Avalanche Voltage  
and Current  
D-Pak  
I-Pak  
IRFR3707Z  
IRFU3707Z  
Absolute Maximum Ratings  
Parameter  
Max.  
30  
Units  
V
VDS  
Drain-to-Source Voltage  
V
± 20  
56  
Gate-to-Source Voltage  
GS  
I
I
I
@ TC = 25°C  
A
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
D
D
@ TC = 100°C  
39  
220  
50  
DM  
P
P
@TC = 25°C  
W
Maximum Power Dissipation  
Maximum Power Dissipation  
Linear Derating Factor  
D
D
@TC = 100°C  
25  
0.33  
W/°C  
°C  
T
-55 to + 175  
Operating Junction and  
J
T
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
STG  
300 (1.6mm from case)  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
3.0  
Units  
°C/W  
RθJC  
Junction-to-Case  
RθJA  
RθJA  
50  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
110  
Notes  through are on page 11  
www.irf.com  
1
04/03/03  

IRFR3707Z 替代型号

型号 品牌 替代类型 描述 数据表
IRFR3707ZTRPBF INFINEON

类似代替

HEXFETPower MOSFET
IRLR8259TRPBF INFINEON

类似代替

HEXFET Power MOSFET
IRFR3707ZPBF INFINEON

类似代替

HEXFET Power MOSFET

与IRFR3707Z相关器件

型号 品牌 获取价格 描述 数据表
IRFR3707ZCPBF KERSEMI

获取价格

High Frequency Synchronous Buck Converters for Computer Processor Power
IRFR3707ZCPBF INFINEON

获取价格

HEXFET Power MOSFET
IRFR3707ZCTRPBF INFINEON

获取价格

Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Me
IRFR3707ZCTRRPBF INFINEON

获取价格

Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Me
IRFR3707ZPBF KERSEMI

获取价格

High Frequency Synchronous Buck Converters for Computer Processor Power
IRFR3707ZPBF INFINEON

获取价格

HEXFET Power MOSFET
IRFR3707ZPBFTR INFINEON

获取价格

Transistor
IRFR3707ZPBFTRR INFINEON

获取价格

Transistor
IRFR3707ZTR UMW

获取价格

种类:N-Channel;漏源电压(Vdss):30V;持续漏极电流(Id)(在25°C时
IRFR3707ZTRL KERSEMI

获取价格

High Frequency Synchronous Buck Converters for Computer Processor Power