IRFR3704

更新时间： 2024-11-19 22:40:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	116K
描述
Power MOSFET(Vdss=20V, Rds(on)max=9.5mohm, Id=75A)

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中文翻译

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数据手册

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IRFR3704 数据手册

PD - 93887B

IRFR3704

IRFU3704

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

l High Frequency DC-DC Isolated

Converters with Synchronous Rectification

for Telecom and Industrial use

V_DSS

20V

R_DS(on)max

I_D

75A

9.5mΩ

l High Frequency Buck Converters for

Computer Processor Power

Benefits

l Ultra-Low R_DS(on)

l Very Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

D-Pak

IRFR3704

I-Pak

IRFU3704

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_DS

Drain-Source Voltage

± 20

300

V_GS

Gate-to-Source Voltage

I_D@ T_C= 25°C

I_D@ T_C= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

P_D@T_C= 70°C

Maximum Power Dissipation

Linear Derating Factor

0.58

mW/°C

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 175

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

1.7

Units

R_θJC

R_θJA

–––

Junction-to-Ambient (PCB mount)*

Junction-to-Ambient

°C/W

110

When mounted on 1" square PCB (FR-4 or G-10 Material) .

For recommended footprint and soldering techniques refer to application note #AN-994

Notes through are on page 9

www.irf.com

8/22/00

12 3 4 5 6 7...9

中文翻译

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与IRFR3704相关器件

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IRFR3704TRR	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 20V, 0.0095ohm, 1-Element, N-Channel, Silicon, Me
IRFR3704TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 20V, 0.0095ohm, 1-Element, N-Channel, Silicon, Me
IRFR3704Z	INFINEON	获取价格	HEXFET Power MOSFET
IRFR3704Z	KERSEMI	获取价格	High Frequency Synchronous Buck Converters for Computer Processor Power
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