Datasheet > IRFR3704TRRPBF

IRFR3704TRRPBF

更新时间： 2024-11-24 19:55:07

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
9页	148K
描述
Power Field-Effect Transistor, 30A I(D), 20V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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IRFR3704TRRPBF 数据手册

PD - 93887D

IRFR3704

SMPS MOSFET

IRFU3704

HEXFET^®Power MOSFET

Applications

l High Frequency DC-DC Isolated

Converters with Synchronous Rectification

for Telecom and Industrial use

V_DSS

20V

R_DS(on)max

I_D

75A

9.5mΩ

l High Frequency Buck Converters for

Computer Processor Power

l 100% R_GTested

Benefits

l Ultra-Low R_DS(on)

l Very Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

D-Pak

I-Pak

IRFR3704

IRFU3704

Absolute Maximum Ratings

Max

Symbol

Parameter

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

@ T = 25°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 70°C

300

Maximum Power Dissipation

@T = 25°C

@T = 70°C

Linear Derating Factor

0.58

W/°C

°C

T_J, T

Junction and Storage Temperature Range

-55 to +175

STG

Thermal Resistance

Symbol

Parameter

Junction-to-Case

Typ

Max

1.7

Units

R_θJC

R_θJA

–––

Junction-to-Ambient (PCB Mount) *

Junction-to-Ambient

°C/W

110

When mounted on 1" square PCB (FR-4 or G-10 Material) .

For recommended footprint and soldering techniques refer to application note #AN-994

Notes through ꢀ are on page 9

www.irf.com

3/4/04

12 3 4 5 6 7...9

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