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IRFR3518TR PDF预览

IRFR3518TR

更新时间: 2024-11-06 13:08:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲
页数 文件大小 规格书
10页 548K
描述
Power Field-Effect Transistor, 38A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

IRFR3518TR 数据手册

 浏览型号IRFR3518TR的Datasheet PDF文件第2页浏览型号IRFR3518TR的Datasheet PDF文件第3页浏览型号IRFR3518TR的Datasheet PDF文件第4页浏览型号IRFR3518TR的Datasheet PDF文件第5页浏览型号IRFR3518TR的Datasheet PDF文件第6页浏览型号IRFR3518TR的Datasheet PDF文件第7页 
PD - 94523  
IRFR3518  
IRFU3518  
HEXFET® Power MOSFET  
Applications  
l High frequency DC-DC converters  
VDSS  
RDS(on) max  
ID  
80V  
29mW  
30A  
Benefits  
l Low Gate-to-Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
l Fully Characterized Avalanche Voltage  
and Current  
D-Pak  
IRFR3518  
I-Pak  
IRFU3518  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain-to-Source Voltage  
80  
V
VGS  
Gate-to-Source Voltage  
20  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
38  
27  
A
150  
PD @TC = 25°C  
Power Dissipation  
110  
W
Linear Derating Factor  
0.71  
W/°C  
V/ns  
dv/dt  
TJ  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
5.2  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Case  
–––  
–––  
–––  
1.4  
Junction-to-Ambient (PCB mount)†  
Junction-to-Ambient  
40  
°C/W  
110  
Notes  through † are on page 10  
www.irf.com  
1
09/23/02  

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