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IRFR3607 PDF预览

IRFR3607

更新时间: 2024-11-06 20:56:15
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
10页 366K
描述
Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

IRFR3607 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.65
雪崩能效等级(Eas):120 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:75 V
最大漏极电流 (ID):56 A最大漏源导通电阻:0.009 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):310 A认证状态:Not Qualified
表面贴装:YES端子面层:NOT SPECIFIED
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFR3607 数据手册

 浏览型号IRFR3607的Datasheet PDF文件第2页浏览型号IRFR3607的Datasheet PDF文件第3页浏览型号IRFR3607的Datasheet PDF文件第4页浏览型号IRFR3607的Datasheet PDF文件第5页浏览型号IRFR3607的Datasheet PDF文件第6页浏览型号IRFR3607的Datasheet PDF文件第7页 
PD - 97312A  
IRFR3607PbF  
IRFU3607PbF  
Applications  
l High Efficiency Synchronous Rectification in  
HEXFET® Power MOSFET  
SMPS  
l Uninterruptible Power Supply  
l High Speed Power Switching  
l Hard Switched and High Frequency Circuits  
D
S
VDSS  
RDS(on) typ.  
max.  
ID (Silicon Limited)  
ID (Package Limited)  
75V  
7.34m  
9.0m  
80A  
G
Benefits  
l Improved Gate, Avalanche and Dynamic  
56A  
dv/dt Ruggedness  
l Fully Characterized Capacitance and  
Avalanche SOA  
D
l Enhanced body diode dV/dt and dI/dt  
Capability  
S
S
D
G
G
D-Pak  
IRFR3607PbF  
I-Pak  
IRFU3607PbF  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
80  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)  
56  
A
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)  
Pulsed Drain Current  
56  
310  
140  
PD @TC = 25°C  
W
Maximum Power Dissipation  
Linear Derating Factor  
0.96  
W/°C  
V
VGS  
± 20  
Gate-to-Source Voltage  
27  
Peak Diode Recovery  
dv/dt  
TJ  
V/ns  
°C  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
300  
Avalanche Characteristics  
Single Pulse Avalanche Energy  
EAS (Thermally limited)  
120  
46  
mJ  
A
Avalanche Current  
IAR  
Repetitive Avalanche Energy  
EAR  
mJ  
14  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.045  
50  
Units  
°C/W  
RθJC  
Junction-to-Case  
RθJA  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
Rθ  
JA  
110  
www.irf.com  
1
09/10/09  

IRFR3607 替代型号

型号 品牌 替代类型 描述 数据表
AUIRFR3607TRL INFINEON

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