是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.65 |
雪崩能效等级(Eas): | 120 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 75 V |
最大漏极电流 (ID): | 56 A | 最大漏源导通电阻: | 0.009 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-252AA |
JESD-30 代码: | R-PSSO-G2 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 310 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | NOT SPECIFIED |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
AUIRFR3607TRL | INFINEON |
功能相似 |
Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Met |
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IRFR3607PBF | INFINEON |
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HEXFET Power MOSFET | |
IRFR3607TR | INFINEON |
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Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Met | |
IRFR3607TRL | INFINEON |
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Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Met | |
IRFR3607TRLPBF | INFINEON |
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Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Met | |
IRFR3607TRPBF | INFINEON |
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High Efficiency Synchronous Rectification in SMPS | |
IRFR3607TRR | INFINEON |
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Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Met | |
IRFR3607TRRPBF | INFINEON |
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Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Met | |
IRFR3704 | INFINEON |
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Power MOSFET(Vdss=20V, Rds(on)max=9.5mohm, Id | |
IRFR3704PBF | INFINEON |
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HEXFET Power MOSFET | |
IRFR3704TRLPBF | INFINEON |
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Power Field-Effect Transistor, 30A I(D), 20V, 0.0095ohm, 1-Element, N-Channel, Silicon, Me |