Datasheet > IRFR3505PBF

IRFR3505PBF

更新时间： 2024-11-05 12:04:55

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
11页	4255K
描述
AUTOMOTIVE MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFR3505PBF 数据手册

PD - 95511A

IRFR3505PbF

AUTOMOTIVE MOSFET

IRFU3505PbF

HEXFET^®Power MOSFET

Features

Advanced Process Technology

V_DSS= 55V

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

R_DS(on)= 0.013Ω

I_D= 30A

Description

Specifically designed for Automotive applications, this HEXFET^®Power

MOSFET utilizes the latest processing techniques to achieve extremely

low on-resistance per silicon area. Additional features of this product are

a 175°C junction operating temperature, fast switching speed and im-

proved repetitive avalanche rating. These features combine to make this

design an extremely efficient and reliable device for use in Automotive

applications and a wide variety of other applications.

D-Pak

IRFR3505

I-Pak

IRFU3505

The D-Pak is designed for surface mounting using vapor phase, infrared,

or wave soldering techniques. The straight lead version (IRFU series) is

for through-hole mounting applications. Power dissipation levels up to

1.5 watts are possible in typical surface mount applications.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Silicon limited)

Continuous Drain Current, V_GS@ 10V (See Fig.9)

Continuous Drain Current, V_GS@ 10V (Package limited)

Pulsed Drain Current

280

140

0.92

± 20

210

410

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

V_GS

Gate-to-Source Voltage

E_AS

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(tested)

I_AR

See Fig.12a, 12b, 15, 16

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

dv/dt

T_J

4.0

V/ns

Operating Junction and

-55 to + 175

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.09

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)

°C/W

Junction-to-Ambient

110

www.kersemi.com

12/03/04

12 3 4 5 6 7...11

中文翻译

下载PDF

与IRFR3505PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFR3505TRL	KERSEMI	获取价格	AUTOMOTIVE MOSFET
IRFR3505TRL	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 55V, 0.013ohm, 1-Element, N-Channel, Silicon, Met
IRFR3505TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 55V, 0.013ohm, 1-Element, N-Channel, Silicon, Met
IRFR3505TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 55V, 0.013ohm, 1-Element, N-Channel, Silicon, Met
IRFR3518	KERSEMI	获取价格	High frequency DC-DC converters
IRFR3518	INFINEON	获取价格	HEXFET Power MOSFET
IRFR3518PBF	KERSEMI	获取价格	High frequency DC-DC converters
IRFR3518PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFR3518TR	INFINEON	获取价格	Power Field-Effect Transistor, 38A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Met
IRFR3518TRL	INFINEON	获取价格	Power Field-Effect Transistor, 38A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Met

与IRFR3505PBF相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

10
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFR3505PBF

IRFR3505PBF 数据手册

与IRFR3505PBF相关器件

与IRFR3505PBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFR3505PBF

IRFR3505PBF 数据手册

与IRFR3505PBF相关器件

与IRFR3505PBF相关文章

您还可以找

您在本页遇到什么问题？