Datasheet > IRFR3505TRPBF

IRFR3505TRPBF

更新时间： 2024-11-24 20:10:47

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
11页	329K
描述
Power Field-Effect Transistor, 30A I(D), 55V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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IRFR3505TRPBF 数据手册

PD - 95511B

IRFR3505PbF

IRFU3505PbF

HEXFET^®Power MOSFET

Features

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

V_DSS= 55V

R_DS(on)= 0.013Ω

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

I_D= 30A

Description

ThisHEXFET^®PowerMOSFETutilizesthelatestprocessing

techniques to achieve extremely low on-resistance per

silicon area. Additional features of this product are a 175°C

junction operating temperature, fast switching speed and

improved repetitive avalanche rating. These features

combine to make this design an extremely efficient and

reliable device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU series) is for through-hole mounting

applications. Power dissipation levels up to 1.5 watts are

possible in typical surface mount applications.

D-Pak

IRFR3505PbF

I-Pak

IRFU3505PbF

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Silicon limited)

Continuous Drain Current, V_GS@ 10V (See Fig.9)

Continuous Drain Current, V_GS@ 10V (Package limited)

Pulsed Drain Current

280

140

0.92

± 20

210

410

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

V_GS

Gate-to-Source Voltage

E_AS

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(tested)

I_AR

See Fig.12a, 12b, 15, 16

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

dv/dt

T_J

4.0

V/ns

Operating Junction and

-55 to + 175

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.09

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)

°C/W

Junction-to-Ambient

110

www.irf.com

09/27/10

12 3 4 5 6 7...11

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与IRFR3505TRPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFR3518	KERSEMI	获取价格	High frequency DC-DC converters
IRFR3518	INFINEON	获取价格	HEXFET Power MOSFET
IRFR3518PBF	KERSEMI	获取价格	High frequency DC-DC converters
IRFR3518PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFR3518TR	INFINEON	获取价格	Power Field-Effect Transistor, 38A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Met
IRFR3518TRL	INFINEON	获取价格	Power Field-Effect Transistor, 38A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Met
IRFR3518TRLPBF	INFINEON	获取价格	暂无描述
IRFR3518TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 38A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Met
IRFR3518TRR	INFINEON	获取价格	暂无描述
IRFR3518TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 38A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Met

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