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IRFR3505TRL

更新时间： 2024-11-20 12:33:43
品牌 Logo 应用领域
科盛美 - KERSEMI 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
11页 4574K
描述
AUTOMOTIVE MOSFET

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IRFR3505TRL 数据手册

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PD - 94506A  
IRFR3505  
AUTOMOTIVE MOSFET  
IRFU3505  
HEXFET® Power MOSFET  
Features  
D
●
●
●
●
●
Advanced Process Technology  
VDSS = 55V  
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
RDS(on) = 0.013Ω  
G
Repetitive Avalanche Allowed up to Tjmax  
ID = 30A  
S
Description  
Specifically designed for Automotive applications, this HEXFET® Power  
MOSFET utilizes the latest processing techniques to achieve extremely  
low on-resistance per silicon area. Additional features of this product are  
a 175°C junction operating temperature, fast switching speed and im-  
proved repetitive avalanche rating. These features combine to make this  
design an extremely efficient and reliable device for use in Automotive  
applications and a wide variety of other applications.  
D-Pak  
IRFR3505  
I-Pak  
IRFU3505  
The D-Pak is designed for surface mounting using vapor phase, infrared,  
or wave soldering techniques. The straight lead version (IRFU series) is  
for through-hole mounting applications. Power dissipation levels up to  
1.5 watts are possible in typical surface mount applications.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V (Silicon limited)  
Continuous Drain Current, VGS @ 10V (See Fig.9)  
Continuous Drain Current, VGS @ 10V (Package limited)  
Pulsed Drain Current   
71  
49  
A
30  
280  
140  
0.92  
20  
PD @TC = 25°C  
Power Dissipation  
W
W/°C  
V
Linear Derating Factor  
VGS  
Gate-to-Source Voltage  
EAS  
Single Pulse Avalanche Energy‚  
Single Pulse Avalanche Energy Tested Value‡  
Avalanche Current  
210  
410  
mJ  
EAS (tested)  
IAR  
See Fig.12a, 12b, 15, 16  
A
EAR  
Repetitive Avalanche Energy†  
Peak Diode Recovery dv/dt ƒ  
mJ  
dv/dt  
TJ  
4.0  
V/ns  
Operating Junction and  
-55 to + 175  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 seconds  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
–––  
–––  
Max.  
1.09  
40  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Ambient (PCB mount)ˆ  
°C/W  
Junction-to-Ambient  
110  
www.kersemi.com  
1
12/11/02  
1234567...11

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IRFR3518TRL INFINEON

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IRFR3518TRLPBF INFINEON

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 		暂无描述
IRFR3518TRPBF INFINEON

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