IRFR3412PBF

更新时间： 2024-11-05 04:23:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体开关晶体管功率场效应晶体管脉冲
页数	文件大小	规格书
10页	225K
描述
SMPS MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IRFR3412PBF 数据手册

PD - 95498A

IRFR3412PbF

IRFU3412PbF

HEXFET^®Power MOSFET

SMPS MOSFET

Applications

V_DSS

R_DS(on)max

I_D

l Switch Mode Power Supply (SMPS)

l Motor Drive

100V

0.025Ω

48A

Bridge Converters

All Zero Voltage Switching

l Lead-Free

Benefits

l Low Gate Charge Qg results in Simple

Drive Requirement

l Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

l Enhanced Body Diode dv/dt Capability

D-Pak

IRFR3412

I-Pak

IRFU3412

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

190

P_D@T_C= 25°C

Power Dissipation

140

W/°C

Linear Derating Factor

0.95

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 20

Peak Diode Recovery dv/dt

Operating Junction and

6.4

V/ns

°C

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 second

Mounting torqe, 6-32 or M3 screw

300(1.6mm from case )

10 lbf•in (1.1N•m)

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Conditions

MOSFET symbol

I_S

Continuous Source Current

(Body Diode)

––– ––– 48

showing the

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

p-n junction diode.

––– ––– 190

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

Reverse RecoveryCurrent

Forward Turn-On Time

––– ––– 1.3

––– 68 100

––– 160 240

––– 4.5 6.8

T_J= 25°C, I_S= 29A, V_GS= 0V

T_J= 125°C, I_F= 29A

Q_rr

I_RRM

t_on

nC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

www.irf.com

12/03/04

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中文翻译

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IRFR3412PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFR3710ZPBF	INFINEON	类似代替	AUTOMOTIVE MOSFET

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