Datasheet > IRFR3504ZPBF

IRFR3504ZPBF

更新时间： 2024-11-05 12:33:43

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
11页	4240K
描述
Advanced Process Technology

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中文翻译

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数据手册

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IRFR3504ZPBF 数据手册

PD - 95521A

IRFR3504ZPbF

AUTOMOTIVE MOSFET

IRFU3504ZPbF

HEXFET^®Power MOSFET

Features

Advanced Process Technology

V_DSS= 40V

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

R_DS(on)= 9.0mΩ

I_D= 42A

Description

Specifically designed for Automotive applications, this HEXFET^®

Power MOSFET utilizes the latest processing techniques to

achieve extremely low on-resistance per silicon area. Additional

features of this design are a 175°C junction operating tempera-

ture, fast switching speed and improved repetitive avalanche

rating . These features combine to make this design an extremely

efficientandreliabledeviceforuseinAutomotiveapplicationsand

a wide variety of other applications.

D-Pak

IRFR3504Z

I-Pak

IRFU3504Z

Absolute Maximum Ratings

Parameter

Max.

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

@ T = 25°C

@ T = 100°C

@ T = 25°C

310

@T = 25°C

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

0.60

± 20

W/°C

E_{AS (Thermally limited)}

Single Pulse Avalanche Energy Tested Value

Avalanche Current

_AS(Tested )

110

I_AR

See Fig.12a, 12b, 15, 16

Repetitive Avalanche Energy

E_AR

Operating Junction and

-55 to + 175

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

300 (1.6mm from case )

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.66

Units

R_θJC

R_θJA

Junction-to-Case

Junction-to-Ambient (PCB mount)

°C/W

Junction-to-Ambient

110

www.kersemi.com

1/17/05

12 3 4 5 6 7...11

中文翻译

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