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IRFR3418PBF PDF预览

IRFR3418PBF

更新时间: 2024-11-24 04:23:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
10页 236K
描述
HEXFET Power MOSFET

IRFR3418PBF 数据手册

 浏览型号IRFR3418PBF的Datasheet PDF文件第2页浏览型号IRFR3418PBF的Datasheet PDF文件第3页浏览型号IRFR3418PBF的Datasheet PDF文件第4页浏览型号IRFR3418PBF的Datasheet PDF文件第5页浏览型号IRFR3418PBF的Datasheet PDF文件第6页浏览型号IRFR3418PBF的Datasheet PDF文件第7页 
PD - 95516A  
IRFR3418PbF  
IRFU3418PbF  
HEXFET® Power MOSFET  
Applications  
l High frequency DC-DC converters  
VDSS RDS(on) Max  
ID  
l Lead-Free  
14m  
80V  
30A  
Benefits  
l Low Gate-to-Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
l Fully Characterized Avalanche Voltage  
and Current  
D-Pak  
IRFR3418  
I-Pak  
IRFU3418  
Absolute Maximum Ratings  
Parameter  
Max.  
80  
Units  
VDS  
VGS  
Drain-to-Source Voltage  
V
Gate-to-Source Voltage  
± 20  
70  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ T = 25°C  
C
D
D
@ T = 100°C  
C
50  
280  
140  
3.8  
A
DM  
P
P
@T = 25°C  
C
Maximum Power Dissipation  
Maximum Power Dissipation  
W
D
D
@T = 25°C  
A
Linear Derating Factor  
0.95  
W/°C  
dv/dt  
T
J
Peak Diode Recovery dv/dt  
Operating Junction and  
5.2  
V/ns  
°C  
-55 to + 175  
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.05  
40  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Case  
Junction-to-Ambient (PCB Mount) *  
Junction-to-Ambient  
°C/W  
110  
Notes  through †are on page 10  
www.irf.com  
1
12/03/04  

IRFR3418PBF 替代型号

型号 品牌 替代类型 描述 数据表
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