Datasheet > IRFR3418TRPBF

IRFR3418TRPBF

更新时间： 2024-11-20 22:52:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	239K
描述
MOSFET N-CH 80V 70A DPAK

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中文翻译

获取价格

数据手册
替代型号

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IRFR3418TRPBF 数据手册

PD - 95516A

IRFR3418PbF

IRFU3418PbF

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

V_DSSR_DS(on)Max

I_D

l Lead-Free

14m

80V

30A

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D-Pak

IRFR3418

I-Pak

IRFU3418

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

V_GS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 25°C

@ T = 100°C

280

140

3.8

@T = 25°C

Maximum Power Dissipation

@T = 25°C

Linear Derating Factor

0.95

W/°C

dv/dt

Peak Diode Recovery dv/dt

Operating Junction and

5.2

V/ns

°C

-55 to + 175

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Thermal Resistance

Parameter

Typ.

–––

Max.

1.05

Units

R_θJC

R_θJA

Junction-to-Case

Junction-to-Ambient (PCB Mount) *

Junction-to-Ambient

°C/W

110

Notes through are on page 10

www.irf.com

12/03/04

12 3 4 5 6 7...11

中文翻译

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IRFR3418TRPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFR3710ZTRPBF	INFINEON	类似代替	Advanced Process Technology

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