PD - 95315B
IRFR3504PbF
IRFU3504PbF
HEXFET® Power MOSFET
Features
Advanced Process Technology
UltraLowOn-Resistance
175°COperatingTemperature
Fast Switching
D
VDSS = 40V
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
RDS(on) = 9.2mΩ
G
Description
This HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this product are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use in
a wide variety of applications.
ID = 30A
S
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
D-Pak
I-Pak
IRFR3504PbF
IRFU3504PbF
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon limited)
Continuous Drain Current, VGS @ 10V (See Fig.9)
Continuous Drain Current, VGS @ 10V (Package limited)
Pulsed Drain Current
87
61
30
A
350
PD @TC = 25°C
Power Dissipation
140
W
W/°C
V
Linear Derating Factor
0.92
VGS
Gate-to-Source Voltage
± 20
EAS
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
240
480
mJ
EAS (tested)
IAR
See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
Operating Junction and
mJ
TJ
-55 to + 175
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
–––
Max.
1.09
50
Units
RθJC
RθJA
RθJA
Junction-to-Ambient (PCB mount)
°C/W
Junction-to-Ambient
110
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
1
09/21/10