Datasheet > IRFR3504TRPBF

IRFR3504TRPBF

更新时间： 2024-11-20 21:15:11

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
11页	321K
描述
Power Field-Effect Transistor, 30A I(D), 40V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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IRFR3504TRPBF 数据手册

PD - 95315B

IRFR3504PbF

IRFU3504PbF

HEXFET^®Power MOSFET

Features

Advanced Process Technology

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

V_DSS= 40V

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

R_DS(on)= 9.2mΩ

Description

This HEXFET® Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per silicon

area. Additional features of this product are a 175°C junction

operating temperature, fast switching speed and improved

repetitive avalanche rating. These features combine to make

this design an extremely efficient and reliable device for use in

a wide variety of applications.

I_D= 30A

The D-Pak is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU series) is for through-hole mounting

applications. Power dissipation levels up to 1.5 watts are

possible in typical surface mount applications.

D-Pak

I-Pak

IRFR3504PbF

IRFU3504PbF

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Silicon limited)

Continuous Drain Current, V_GS@ 10V (See Fig.9)

Continuous Drain Current, V_GS@ 10V (Package limited)

Pulsed Drain Current

350

P_D@T_C= 25°C

Power Dissipation

140

W/°C

Linear Derating Factor

0.92

V_GS

Gate-to-Source Voltage

± 20

E_AS

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

240

480

E_AS(tested)

I_AR

See Fig.12a, 12b, 15, 16

E_AR

Repetitive Avalanche Energy

Operating Junction and

T_J

-55 to + 175

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.09

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)

°C/W

Junction-to-Ambient

110

HEXFET(R) is a registered trademark of International Rectifier.

www.irf.com

09/21/10

12 3 4 5 6 7...11

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