Datasheet > IRFR3412TRR

IRFR3412TRR

更新时间： 2024-11-20 12:08:39

品牌	Logo	应用领域
科盛美 - KERSEMI		开关
页数	文件大小	规格书
10页	3572K
描述
Switch Mode Power Supply (SMPS)

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中文翻译

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数据手册

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IRFR3412TRR 数据手册

IRFR3412

IRFU3412

Applications

^lSwitch Mode Power Supply (SMPS)

^lMotor Drive

V_DSS

R_DS(on)max

I_D

100V

0.025Ω

48A

Bridge Converters

All Zero Voltage Switching

Benefits

^lLow Gate Charge Qg results in Simple

Drive Requirement

^lImproved Gate, Avalanche and Dynamic

dv/dt Ruggedness

^lFully Characterized Capacitance and

Avalanche Voltage and Current

^lEnhanced Body Diode dv/dt Capability

D-Pak

IRFR3412

I-Pak

IRFU3412

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

190

P_D@T_C= 25°C

Power Dissipation

140

W/°C

Linear Derating Factor

0.95

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 20

Peak Diode Recovery dv/dt

Operating Junction and

6.4

V/ns

°C

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 second

Mounting torqe, 6-32 or M3 screw

300(1.6mm from case )

10 lbf•in (1.1N•m)

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Conditions

MOSFET symbol

I_S

Continuous Source Current

(Body Diode)

––– ––– 48

showing the

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

p-n junction diode.

––– ––– 190

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

Reverse RecoveryCurrent

Forward Turn-On Time

––– ––– 1.3

––– 68 100

––– 160 240

––– 4.5 6.8

T_J= 25°C, I_S= 29A, V_GS= 0V

T_J= 125°C, I_F= 29A

Q_rr

I_RRM

t_on

nC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

www.kersemi.com

1/22/02

12 3 4 5 6 7...10

中文翻译

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