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IRFR3411TRLPBF PDF预览

IRFR3411TRLPBF

更新时间: 2024-11-05 12:58:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 227K
描述
Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

IRFR3411TRLPBF 数据手册

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PD - 95371A  
IRFR3411PbF  
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Dynamic dv/dt Rating  
l 175°C Operating Temperature  
l Fast Switching  
IRFU3411PbF  
HEXFET® Power MOSFET  
D
VDSS = 100V  
l Fully Avalanche Rated  
l Lead-Free  
RDS(on) = 44mΩ  
G
Description  
AdvancedHEXFET® PowerMOSFETsfromInternational  
Rectifier utilize advanced processing techniques to  
achieve extremely low on-resistance per silicon area.  
This benefit, combined with the fast switching speed and  
ruggedizeddevicedesignthatHEXFETpowerMOSFETs  
are well known for, provides the designer with an  
extremely efficient and reliable device for use in a wide  
variety of applications.  
ID = 32A  
S
The D-Pak is designed for surface mounting using vapor  
phase, infrared, or wave soldering techniques. The  
straight lead, I-Pak, version (IRFU series) is for through-  
hole mounting applications. Power dissipation levels up  
to 1.5 watts are possible in typical surface mount  
applications.  
D-Pak  
IRFR3411  
I-Pak  
IRFU3411  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
32  
23  
A
110  
PD @TC = 25°C  
Power Dissipation  
130  
W
W/°C  
V
Linear Derating Factor  
0.83  
± 20  
16  
VGS  
IAR  
Gate-to-Source Voltage  
Avalanche Current  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
13  
mJ  
V/ns  
7.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
–––  
–––  
Max.  
1.2  
50  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Ambient (PCB mount)*  
Junction-to-Ambient  
°C/W  
110  
www.irf.com  
1
12/03/04  

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