Datasheet > IRFR3411PBF

IRFR3411PBF

更新时间： 2024-11-20 12:33:43

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
10页	3838K
描述
Advanced Process Technology Ultra Low On-Resistance

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中文翻译

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数据手册

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IRFR3411PBF 数据手册

PD - 95371A

IRFR3411PbF

^lAdvanced Process Technology

^lUltra Low On-Resistance

^lDynamic dv/dt Rating

^l175°C Operating Temperature

^lFast Switching

IRFU3411PbF

HEXFET^®Power MOSFET

V_DSS= 100V

^lFully Avalanche Rated

^lLead-Free

R_DS(on)= 44mΩ

Description

AdvancedHEXFET^®PowerMOSFETsfromInternational

Rectifier utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and

ruggedizeddevicedesignthatHEXFETpowerMOSFETs

are well known for, provides the designer with an

extremely efficient and reliable device for use in a wide

variety of applications.

I_D= 32A

The D-Pak is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The

straight lead, I-Pak, version (IRFU series) is for through-

hole mounting applications. Power dissipation levels up

to 1.5 watts are possible in typical surface mount

applications.

D-Pak

IRFR3411

I-Pak

IRFU3411

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

110

P_D@T_C= 25°C

Power Dissipation

130

W/°C

Linear Derating Factor

0.83

± 20

V_GS

I_AR

Gate-to-Source Voltage

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

7.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.2

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)*

Junction-to-Ambient

°C/W

110

www.kersemi.com

12/03/04

12 3 4 5 6 7...10

中文翻译

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IRFR3411TRPBF	INFINEON	获取价格	Advanced Process Technology
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