Datasheet > IRFR3410

IRFR3410

更新时间： 2024-09-13 12:55:35

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体栅极开关晶体管脉冲
页数	文件大小	规格书
8页	1807K
描述
Low Gate-to-Drain Charge to Reduce Switching Losses

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中文翻译

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数据手册

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IRFR3410 数据手册

IRFR/U3410

HEXFET^®Power MOSFET

Applications

^lHigh frequency DC-DC converters

V_DSS

100V

R_DS(on)max

I_D

31A

39mΩ

Benefits

^lLow Gate-to-Drain Charge to Reduce

Switching Losses

^lFully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

^lFully Characterized Avalanche Voltage

and Current

D-Pak

IRFR3410

I-Pak

IRFU3410

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_DS

Drain-Source Voltage

100

V_GS

Gate-to-Source Voltage

± 20

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

125

P_D@T_C= 25°C

P_D@T_A= 25°C

Maximum Power Dissipation

Linear Derating Factor

110

3.0

0.71

W°C

V/ns

°C

dv/dt

T_J

Peak Diode Recovery dv/dt

Operating Junction and

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJC

R_θJA

Junction-to-Case

–––

1.4

Junction-to-Ambient (PCB mount)*

Junction-to-Ambient

°C/W

110

1 / 10

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