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IRFR3410TRPBF PDF预览

IRFR3410TRPBF

更新时间: 2024-09-13 12:32:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体转换器晶体管开关脉冲
页数 文件大小 规格书
11页 237K
描述
High frequency DC-DC converters

IRFR3410TRPBF 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:0.79Is Samacsys:N
雪崩能效等级(Eas):140 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):31 A最大漏极电流 (ID):30 A
最大漏源导通电阻:0.039 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):110 W
最大脉冲漏极电流 (IDM):125 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFR3410TRPBF 数据手册

 浏览型号IRFR3410TRPBF的Datasheet PDF文件第2页浏览型号IRFR3410TRPBF的Datasheet PDF文件第3页浏览型号IRFR3410TRPBF的Datasheet PDF文件第4页浏览型号IRFR3410TRPBF的Datasheet PDF文件第5页浏览型号IRFR3410TRPBF的Datasheet PDF文件第6页浏览型号IRFR3410TRPBF的Datasheet PDF文件第7页 
PD - 95514A  
IRFR3410PbF  
IRFU3410PbF  
HEXFET® Power MOSFET  
Applications  
l High frequency DC-DC converters  
l Lead-Free  
VDSS  
100V  
RDS(on) max  
ID  
31A  
†
39mΩ  
Benefits  
l Low Gate-to-Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
l Fully Characterized Avalanche Voltage  
and Current  
D-Pak  
IRFR3410  
I-Pak  
IRFU3410  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
VDS  
Drain-Source Voltage  
100  
V
VGS  
Gate-to-Source Voltage  
± 20  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
31†  
22  
A
125  
PD @TC = 25°C  
PD @TA = 25°C  
Maximum Power Dissipation  
Maximum Power Dissipation  
Linear Derating Factor  
110  
W
3.0  
0.71  
mW°C  
V/ns  
°C  
dv/dt  
TJ  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
15  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Case  
–––  
–––  
–––  
1.4  
Junction-to-Ambient (PCB mount)*  
Junction-to-Ambient  
40  
°C/W  
110  
Notes  through †are on page 10  
www.irf.com  
1
12/03/04  

IRFR3410TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFR3410TRLPBF INFINEON

类似代替

暂无描述
IRFR3410PBF INFINEON

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