5秒后页面跳转
IRFR3410TRPBF PDF预览

IRFR3410TRPBF

更新时间: 2024-11-26 12:32:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体转换器晶体管开关脉冲
页数 文件大小 规格书
11页 237K
描述
High frequency DC-DC converters

IRFR3410TRPBF 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:0.79Is Samacsys:N
雪崩能效等级(Eas):140 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):31 A最大漏极电流 (ID):30 A
最大漏源导通电阻:0.039 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):110 W
最大脉冲漏极电流 (IDM):125 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFR3410TRPBF 数据手册

 浏览型号IRFR3410TRPBF的Datasheet PDF文件第2页浏览型号IRFR3410TRPBF的Datasheet PDF文件第3页浏览型号IRFR3410TRPBF的Datasheet PDF文件第4页浏览型号IRFR3410TRPBF的Datasheet PDF文件第5页浏览型号IRFR3410TRPBF的Datasheet PDF文件第6页浏览型号IRFR3410TRPBF的Datasheet PDF文件第7页 
PD - 95514A  
IRFR3410PbF  
IRFU3410PbF  
HEXFET® Power MOSFET  
Applications  
l High frequency DC-DC converters  
l Lead-Free  
VDSS  
100V  
RDS(on) max  
ID  
31A  
†
39mΩ  
Benefits  
l Low Gate-to-Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
l Fully Characterized Avalanche Voltage  
and Current  
D-Pak  
IRFR3410  
I-Pak  
IRFU3410  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
VDS  
Drain-Source Voltage  
100  
V
VGS  
Gate-to-Source Voltage  
± 20  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
31†  
22  
A
125  
PD @TC = 25°C  
PD @TA = 25°C  
Maximum Power Dissipation  
Maximum Power Dissipation  
Linear Derating Factor  
110  
W
3.0  
0.71  
mW°C  
V/ns  
°C  
dv/dt  
TJ  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
15  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Case  
–––  
–––  
–––  
1.4  
Junction-to-Ambient (PCB mount)*  
Junction-to-Ambient  
40  
°C/W  
110  
Notes  through †are on page 10  
www.irf.com  
1
12/03/04  

IRFR3410TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFR3410TRLPBF INFINEON

类似代替

暂无描述
IRFR3410PBF INFINEON

类似代替

HEXFET Power MOSFET

与IRFR3410TRPBF相关器件

型号 品牌 获取价格 描述 数据表
IRFR3411 INFINEON

获取价格

HEXFET Power MOSFET
IRFR3411PBF INFINEON

获取价格

HEXFET Power MOSFET
IRFR3411PBF KERSEMI

获取价格

Advanced Process Technology Ultra Low On-Resistance
IRFR3411TR INFINEON

获取价格

Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Me
IRFR3411TRHR INFINEON

获取价格

Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Me
IRFR3411TRL INFINEON

获取价格

Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Me
IRFR3411TRLPBF INFINEON

获取价格

Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Me
IRFR3411TRPBF INFINEON

获取价格

 Advanced Process Technology
IRFR3411TRRPBF INFINEON

获取价格

Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Me
IRFR3412 KERSEMI

获取价格

Switch Mode Power Supply (SMPS)