IRFR3410TRL

更新时间： 2024-11-26 12:59:43

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
10页	140K
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中文翻译

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数据手册

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IRFR3410TRL 数据手册

PD - 94505

IRFR3410

IRFU3410

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

V_DSS

100V

R_DS(on)max

I_D

31A

39mΩ

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D-Pak

IRFR3410

I-Pak

IRFU3410

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_DS

Drain-Source Voltage

100

V_GS

Gate-to-Source Voltage

± 20

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

125

P_D@T_C= 25°C

P_D@T_A= 25°C

Maximum Power Dissipation

Linear Derating Factor

110

3.0

0.71

mW°C

V/ns

°C

dv/dt

T_J

Peak Diode Recovery dv/dt

Operating Junction and

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJC

R_θJA

Junction-to-Case

–––

1.4

Junction-to-Ambient (PCB mount)*

Junction-to-Ambient

°C/W

110

Notes through are on page 10

www.irf.com

9/23/02

12 3 4 5 6 7...10

中文翻译

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IRFR3411TRL	INFINEON	获取价格	Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Me
IRFR3411TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Me
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