Datasheet > IRFR120NTRL

IRFR120NTRL

更新时间： 2024-09-28 19:53:07

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
10页	148K
描述
Power Field-Effect Transistor, 9.3A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3

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IRFR120NTRL 数据手册

PD - 91365B

IRFR/U120N

HEXFET^®Power MOSFET

l Surface Mount (IRFR120N)

l Straight Lead (IRFU120N)

l Advanced Process Technology

l Fast Switching

V_DSS= 100V

R_DS(on)= 0.21Ω

l Fully Avalanche Rated

Description

I_D= 9.4A

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowest possible on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide

variety of applications.

The D-PAK is designed for surface mounting using

vapor phase, infrared, or wave soldering techniques.

The straight lead version (IRFU series) is for through-

hole mounting applications. Power dissipation levels

up to 1.5 watts are possible in typical surface mount

applications.

D-PAK

T O -252AA

I-PAK

TO -251AA

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

9.4

6.6

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.32

± 20

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

5.7

4.8

5.0

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

3.1

Units

°C/W

R_θJC

R_θJA

Junction-to-Ambient (PCB mount) **

Junction-to-Ambient

R_θJA

110

www.irf.com

5/11/98

12 3 4 5 6 7...10

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