型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFR121-T1 | SAMSUNG |
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Power Field-Effect Transistor, 8.4A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Met | |
IRFR12N25D | INFINEON |
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SMPS MOSFET | |
IRFR12N25DHR | INFINEON |
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暂无描述 | |
IRFR12N25DPBF | INFINEON |
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HEXFET Power MOSFET ( VDSS = 250V , RDS(on)ma | |
IRFR12N25DPBF | KERSEMI |
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SMPS MOSFET | |
IRFR12N25DTR | INFINEON |
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Power Field-Effect Transistor, 14A I(D), 250V, 0.26ohm, 1-Element, N-Channel, Silicon, Met | |
IRFR12N25DTRL | INFINEON |
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Power Field-Effect Transistor, 14A I(D), 250V, 0.26ohm, 1-Element, N-Channel, Silicon, Met | |
IRFR12N25DTRLP | INFINEON |
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Transistor | |
IRFR12N25DTRPBF | INFINEON |
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Power Field-Effect Transistor, 14A I(D), 250V, 0.26ohm, 1-Element, N-Channel, Silicon, Met | |
IRFR12N25DTRR | INFINEON |
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暂无描述 |