Datasheet > IRFR120ZTR

IRFR120ZTR

更新时间： 2024-11-21 20:46:07

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
11页	200K
描述
Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

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IRFR120ZTR 数据手册

PD - 94754

IRFR120Z

AUTOMOTIVE MOSFET

IRFU120Z

HEXFET^®Power MOSFET

Features

●

Advanced Process Technology

V_DSS= 100V

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

R_DS(on)= 190mΩ

Repetitive Avalanche Allowed up to Tjmax

I_D= 8.7A

Description

Specifically designed for Automotive applications, this HEXFET^®

Power MOSFET utilizes the latest processing techniques to

achieve extremely low on-resistance per silicon area. Additional

features of this design are a 175°C junction operating tempera-

ture, fast switching speed and improved repetitive avalanche

rating . These features combine to make this design an extremely

efficientandreliabledeviceforuseinAutomotiveapplicationsand

a wide variety of other applications.

D-Pak

IRFR120Z

I-Pak

IRFU120Z

Absolute Maximum Ratings

Parameter

Max.

8.7

6.1

Units

(Silicon Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 25°C

@ T = 100°C

@T = 25°C

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

0.23

± 20

W/°C

E_{AS (Thermally limited)}

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(Tested )

I_AR

See Fig.12a, 12b, 15, 16

Repetitive Avalanche Energy

E_AR

Operating Junction and

-55 to + 175

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

300 (1.6mm from case )

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

4.28

Units

R_θ

Junction-to-Case

Junction-to-Ambient (PCB mount)

°C/W

Junction-to-Ambient

110

HEXFET^®is a registered trademark of International Rectifier.

www.irf.com

10/3/03

12 3 4 5 6 7...11

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