IRFR130A

更新时间： 2024-01-18 04:51:41

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	262K
描述
Advanced Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IRFR130A 数据手册

IRFR/U130A

Advanced Power MOSFET

FEATURES

BV_DSS= 100 V

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

R_DS(on)= 0.11

I_D= 13 A

Improved Gate Charge

Extended Safe Operating Area

D-PAK

I-PAK

Lower Leakage Current : 10 A (Max.) @ V_DS= 100V

Lower R_DS(ON): 0.092

(Typ.)

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Value

100

Units

V_DSS

Continuous Drain Current (T_C=25 C)

I_D

Continuous Drain Current (T_C=100 C)

8.2

I_DM

V_GS

E_AS

I_AR

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

225

E_AR

dv/dt

Repetitive Avalanche Energy

4.1

6.5

2.5

V/ns

Peak Diode Recovery dv/dt

Total Power Dissipation (T_A=25

)

P_D

Total Power Dissipation (T =25

Linear Derating Factor

0.32

W/ C

Operating Junction and

Storage Temperature Range

T_J, T_STG

- 55 to +150

300

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

T_L

Thermal Resistance

Symbol

Characteristic

Typ.

Max.

Units

R _q

Junction-to-Case

3.08

R_q

Junction-to-Ambient

C /W

R_q

110

When mounted on the minimum pad size recommended (PCB Mount).

Rev. B

12 3 4 5 6 7

中文翻译

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IRFR130A 替代型号

型号	品牌	替代类型	描述	数据表
IRFR130ATM	FAIRCHILD	功能相似	Power Field-Effect Transistor, 13A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Met

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