Datasheet > IRFR12N25DTRPBF

IRFR12N25DTRPBF

更新时间： 2023-02-15 00:00:00

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	225K
描述
Power Field-Effect Transistor, 14A I(D), 250V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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IRFR12N25DTRPBF 数据手册

PD - 95353A

IRFR12N25DPbF

IRFU12N25DPbF

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

l Lead-Free

V_DSS

250V

R_DS(on)max

I_D

14A

0.26Ω

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D-Pak

IRFR12N25D

I-Pak

IRFU12N25D

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

9.7

P_D@T_C= 25°C

Power Dissipation

144

W/°C

Linear Derating Factor

0.96

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

9.3

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJC

R_θJA

Junction-to-Case

–––

1.04

Junction-to-Ambient (PCB mount)*

Junction-to-Ambient

°C/W

110

Notes through ꢀare on page 10

www.irf.com

12/2/04

12 3 4 5 6 7...11

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