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IRFR120Z PDF预览

IRFR120Z

更新时间: 2024-11-25 04:23:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
11页 264K
描述
AUTOMOTIVE MOSFET

IRFR120Z 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.7
其他特性:AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE雪崩能效等级(Eas):18 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):8.7 A
最大漏源导通电阻:0.19 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):35 A认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFR120Z 数据手册

 浏览型号IRFR120Z的Datasheet PDF文件第2页浏览型号IRFR120Z的Datasheet PDF文件第3页浏览型号IRFR120Z的Datasheet PDF文件第4页浏览型号IRFR120Z的Datasheet PDF文件第5页浏览型号IRFR120Z的Datasheet PDF文件第6页浏览型号IRFR120Z的Datasheet PDF文件第7页 
PD - 95772A  
IRFR120ZPbF  
AUTOMOTIVE MOSFET  
IRFU120ZPbF  
HEXFET® Power MOSFET  
Features  
D
l
l
l
l
l
l
Advanced Process Technology  
VDSS = 100V  
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free  
RDS(on) = 190mΩ  
G
ID = 8.7A  
S
Description  
Specifically designed for Automotive applications, this HEXFET®  
Power MOSFET utilizes the latest processing techniques to  
achieve extremely low on-resistance per silicon area. Additional  
features of this design are a 175°C junction operating tempera-  
ture, fast switching speed and improved repetitive avalanche  
rating . These features combine to make this design an extremely  
efficientandreliabledeviceforuseinAutomotiveapplicationsand  
a wide variety of other applications.  
D-Pak  
IRFR120Z  
I-Pak  
IRFU120Z  
Absolute Maximum Ratings  
Parameter  
Max.  
8.7  
6.1  
35  
Units  
A
(Silicon Limited)  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ T = 25°C  
C
D
D
@ T = 100°C  
C
DM  
P
@T = 25°C  
Power Dissipation  
C
35  
W
D
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy  
0.23  
± 20  
W/°C  
V
V
GS  
EAS (Thermally limited)  
18  
20  
mJ  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
EAS (Tested )  
IAR  
See Fig.12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
EAR  
mJ  
T
J
Operating Junction and  
-55 to + 175  
T
Storage Temperature Range  
°C  
STG  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
4.28  
40  
Units  
Rθ  
Rθ  
Rθ  
Junction-to-Case  
Junction-to-Ambient (PCB mount)  
JC  
JA  
JA  
°C/W  
Junction-to-Ambient  
110  
HEXFET® is a registered trademark of International Rectifier.  
www.irf.com  
1
12/06/04  

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