是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.7 |
其他特性: | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 雪崩能效等级(Eas): | 18 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 8.7 A |
最大漏源导通电阻: | 0.19 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252AA | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e0 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 245 | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 35 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
AUIRFR120Z | INFINEON |
类似代替 |
Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Me | |
IRFR120ZTRPBF | INFINEON |
类似代替 |
暂无描述 | |
IRFR120ZPBF | INFINEON |
类似代替 |
AUTOMOTIVE MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFR120ZPBF | INFINEON |
获取价格 |
AUTOMOTIVE MOSFET | |
IRFR120ZTR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Me | |
IRFR120ZTRL | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Me | |
IRFR120ZTRLPBF | INFINEON |
获取价格 |
暂无描述 | |
IRFR120ZTRPBF | INFINEON |
获取价格 |
暂无描述 | |
IRFR120ZTRR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Me | |
IRFR120ZTRRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Me | |
IRFR121 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8.4A I(D) | TO-252 | |
IRFR121-T1 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 8.4A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Met | |
IRFR12N25D | INFINEON |
获取价格 |
SMPS MOSFET |