Datasheet > IRFR120TRRPBF

IRFR120TRRPBF

更新时间： 2024-11-25 12:04:55

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
7页	4224K
描述
Power MOSFET

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中文翻译

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数据手册

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IRFR120TRRPBF 数据手册

IRFR120, IRFU120, SiHFR120, SiHFU120

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

100

Available

• Repetitive Avalanche Rated

0.27

R_DS(on)(Ω)

V_GS= 10 V

RoHS*

• Surface Mount (IRFR120/SiHFR120)

COMPLIANT

Q_g(Max.) (nC)

4.4

7.7

• Straight Lead (IRFU120/SiHFU120)

• Available in Tape and Reel

• Fast Switching

_gs(nC)

Q_gd(nC)

Configuration

Single

• Ease of Paralleling

• Lead (Pb)-free Available

DPAK

IPAK

(TO-252)

(TO-251)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

N-Channel MOSFET

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR120PbF

SiHFR120-E3

IRFR120

DPAK (TO-252)

IRFR120TRPbF^a

SiHFR120T-E3^a

IRFR120TR^a

DPAK (TO-252)

IRFR120TRRPbF^a

SiHFR120TR-E3^a

IRFR120TRR^a

DPAK (TO-252)

IRFR120TRLPbF^a

SiHFR120TL-E3^a

IRFR120TRL^a

IPAK (TO-251)

IRFU120PbF

SiHFU120-E3

IRFU120

Lead (Pb)-free

SnPb

SiHFR120

SiHFR120T^a

SiHFR120TR^a

SiHFR120TL^a

SiHFU120

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

100

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

_C= 100 °C

7.7

Continuous Drain Current

V_GSat 10 V

I_D

4.9

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.33

0.020

210

7.7

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

E_AS

I_AR

E_AR

4.2

T_C= 25 °C

T_A= 25 °C

P_D

2.5

dV/dt

5.5

V/ns

* Pb containing terminations are not RoHS compliant, exemptions may apply

www.kersemi.com

12 3 4 5 6 7

中文翻译

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与IRFR120TRRPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFR120Z	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRFR120ZPBF	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRFR120ZTR	INFINEON	获取价格	Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Me
IRFR120ZTRL	INFINEON	获取价格	Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Me
IRFR120ZTRLPBF	INFINEON	获取价格	暂无描述
IRFR120ZTRPBF	INFINEON	获取价格	暂无描述
IRFR120ZTRR	INFINEON	获取价格	Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Me
IRFR120ZTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Me
IRFR121	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| 8.4A I(D) \| TO-252
IRFR121-T1	SAMSUNG	获取价格	Power Field-Effect Transistor, 8.4A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Met

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