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IRFN054SMD PDF预览

IRFN054SMD

更新时间: 2024-11-04 22:24:07
品牌 Logo 应用领域
SEME-LAB /
页数 文件大小 规格书
2页 27K
描述
N-CHANNEL POWER MOSFET

IRFN054SMD 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:CHIP CARRIER, R-CBCC-N3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.11
雪崩能效等级(Eas):480 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):45 A最大漏源导通电阻:0.031 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-CBCC-N3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):180 A
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

IRFN054SMD 数据手册

 浏览型号IRFN054SMD的Datasheet PDF文件第2页 
IRFN054SMD  
MECHANICAL DATA  
Dimensions in mm (inches)  
N–CHANNEL  
POWER MOSFET  
0
.
8
9
(
0
.
0
3
5
)
m
i
n
.
3
3
.
.
7
4
0
1
(
(
0
0
.
.
1
1
4
3
6
4
)
)
3
3
.
.
7
4
0
1
(
(
0
0
.
.
1
1
4
3
6
4
)
)
3
.
6
0
(
0
.
1
4
2
)
VDSS  
60V  
45A  
M
a
x
.
ID(cont)  
RDS(on)  
1
3
0.027  
FEATURES  
2
• HERMETICALLY SEALED SURFACE  
MOUNT PACKAGE  
• SMALL FOOTPRINT – EFFICIENT USE OF  
PCB SPACE.  
9
9
.
.
6
3
7
8
(
(
0
0
.
.
3
3
8
6
1
9
)
)
. • SIMPLE DRIVE REQUIREMENTS  
0
0
.
.
5
2
0
6
)
)
(
(
0
0
0
0
2
1
0
0
1
1
1
1
.
.
5
2
8
8
(
(
0
0
.
.
4
4
5
4
6
4
)
)
.
• LIGHTWEIGHT  
• HIGH PACKING DENSITIES  
SMD1  
Pad 1 – Source  
Pad 2 – Drain  
Pad 3 – Gate  
Note: IRFxxxSM also available with  
pins 1 and 3 reversed.  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
case  
V
Gate – Source Voltage  
Continuous Drain Current  
Continuous Drain Current  
±20V  
45A  
GS  
I
I
I
(V = 0 , T  
= 25°C)  
D
GS  
case  
case  
(V = 0 , T  
= 100°C)  
28A  
D
GS  
1
Pulsed Drain Current  
180A  
DM  
P
Power Dissipation @ T = 25°C  
case  
100W  
D
Linear Derating Factor  
0.8W/°C  
480mJ  
4.5V/ns  
–55 to 150°C  
300°C  
2
E
Single Pulse Avalanche Energy  
AS  
3
dv/dt  
T , T  
Peak Diode Recovery  
Operating and Storage Temperature Range  
J
stg  
T
Package Mounting Surface Temperature (for 5 sec)  
Thermal Resistance Junction to Case  
L
R
R
1.25°C/W  
3°C/W  
JC  
J–PCB  
Thermal Resistance Junction to PCB (Typical)  
Notes  
1) Pulse Test: Pulse Width 300ms,  
2%  
2) @ V = 25V , L 0.3mH , R = 25 , Peak I = 45A , Starting T = 25°C  
DD  
G
L
J
3) @ I  
45A , di/dt 200A/ s , V  
BV  
, T  
125°C , SUGGESTED R = 2.35  
G
SD  
DD  
DSS  
J
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim. 7/00  

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