是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | CHIP CARRIER, R-CBCC-N3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.11 |
雪崩能效等级(Eas): | 480 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 45 A | 最大漏源导通电阻: | 0.031 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CBCC-N3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 180 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFN130SMD | SEME-LAB |
获取价格 |
N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS | |
IRFN130SMD05 | SEME-LAB |
获取价格 |
N–CHANNEL POWER MOSFET | |
IRFN140 | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.077ohm, Id=28A) | |
IRFN140PBF | INFINEON |
获取价格 |
暂无描述 | |
IRFN140SMD | SEME-LAB |
获取价格 |
N-CHANNEL POWER MOSFET | |
IRFN150 | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.060ohm, Id=34A) | |
IRFN150PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Me | |
IRFN150SMD | SEME-LAB |
获取价格 |
N-CHANNEL POWER MOSFET | |
IRFN214B | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET | |
IRFN214BTA_FP001 | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 0.6A I(D), 250V, 1-Element, N-Channel, Silicon, Meta |