IRFL014TR

更新时间： 2024-11-16 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	950K
描述
Power MOSFET

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中文翻译

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数据手册

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IRFL014TR 数据手册

IRFL014, SiHFL014

Vishay Siliconix

Power MOSFET

FEATURES

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

PRODUCT SUMMARY

V_DS(V)

Available

R_DS(on)(Ω)

V_GS= 10 V

0.20

RoHS*

Q_g(Max.) (nC)

Q_gs(nC)

3.1

COMPLIANT

_gd(nC)

5.8

Configuration

Single

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

SOT-223

The SOT-223 package is designed for surface-mounting

using vapor phase, infrared, or wave soldering techniques.

Its unique package design allows for easy automatic

pick-and-place as with other SOT or SOIC packages but has

the added advantage of improved thermal performace due to

an enlarged tab for heatsinking. Power dissipation of greater

than 1.25 W is possible in a typical surface mount

application.

N-Channel MOSFET

ORDERING INFORMATION

Package

SOT-223

IRFL014PbF

SiHFL014-E3

IRFL014

IRFL014TRPbF^a

SiHFL014T-E3^a

IRFL014TR^a

SiHFL014T^a

Lead (Pb)-free

SnPb

SiHFL014

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

2.7

Continuous Drain Current

_GSat 10 V

I_D

T_C=100°C

1.7

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.025

0.017

100

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

E_AS

P_D

T_C= 25 °C

3.1

T_A= 25 °C

2.0

dV/dt

4.5

V/ns

°C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

300^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 16 mH, R_G= 25 Ω, I_AS= 2.7 A (see fig. 12).

c. I_SD≤ 10 A, dI/dt ≤ 90 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91191

S-81369-Rev. A, 07-Jul-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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与IRFL014TR相关器件

型号	品牌	获取价格	描述	数据表
IRFL014TRPBF	VISHAY	获取价格	Power MOSFET
IRFL024	INFINEON	获取价格	Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=2.8A)
IRFL024N	INFINEON	获取价格	Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=2.8A)
IRFL024NPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRFL024NTR	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 55V V(BR)DSS \| 4A I(D) \| SOT-223
IRFL024NTRPBF	INFINEON	获取价格	Advanced Process Technology
IRFL024Z	INFINEON	获取价格	HEXFET Power MOSFET
IRFL024ZPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFL024ZTR	INFINEON	获取价格	Small Signal Field-Effect Transistor, 5.1A I(D), 55V, 1-Element, N-Channel, Silicon, Metal
IRFL024ZTRPBF	INFINEON	获取价格	Advanced Process Technology

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