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IRF8707GPBF

更新时间: 2024-11-20 12:06:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体转换器晶体管功率场效应晶体管开关脉冲光电二极管电脑
页数 文件大小 规格书
9页 252K
描述
Control MOSFET of Sync-Buck  Converters used for Notebook  Processor Power

IRF8707GPBF 数据手册

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PD - 96264  
IRF8707GPbF  
HEXFET® Power MOSFET  
Applications  
l
Control MOSFET of Sync-Buck  
Converters used for Notebook  
Processor Power  
VDSS  
30V  
RDS(on) max  
Qg  
11.9m @VGS = 10V  
6.2nC  
l
Control MOSFET for Isolated  
DC-DC Converters in Networking  
Systems  
A
A
D
Benefits  
1
2
3
4
8
7
S
S
S
G
l
l
l
l
Very Low Gate Charge  
D
Very Low RDS(on) at 4.5V VGS  
Ultra-Low Gate Impedance  
Fully Characterized Avalanche Voltage  
and Current  
6
5
D
D
SO-8  
l
l
l
l
20V VGS Max. Gate Rating  
100% tested for Rg  
Top View  
Lead-Free  
Halogen-Free  
Description  
The IRF8707GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the  
industry standard SO-8 package. The IRF8707GPbF has been optimized for parameters that are  
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction  
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC  
converters that power the latest generation of processors for notebook and Netcom applications.  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
30  
Units  
VDS  
V
V
Gate-to-Source Voltage  
± 20  
11  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TA = 25°C  
D
D
@ TA = 70°C  
9.1  
88  
A
DM  
P
P
@TA = 25°C  
@TA = 70°C  
Power Dissipation  
Power Dissipation  
2.5  
1.6  
D
D
W
Linear Derating Factor  
Operating Junction and  
0.02  
-55 to + 150  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient  
Typ.  
–––  
Max.  
20  
Units  
RθJL  
RθJA  
°C/W  
–––  
50  
Notes through are on page 9  
www.irf.com  
1
07/10/09  

IRF8707GPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF8707GTRPBF INFINEON

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