Datasheet > 晶体管 > 小信号场效应晶体管> IRF7335D1TRPBF

IRF7335D1TRPBF

更新时间： 2024-11-13 13:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体肖特基二极管小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
12页	215K
描述
Small Signal Field-Effect Transistor, 10A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, COPACK, SOP-14

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IRF7335D1TRPBF 数据手册

PD- 94546

IRF7335D1

•

Co-Pack Dual N-channel HEXFET Power MOSFET

and Schottky Diode

Ideal for Synchronous Buck DC-DC

Converters Up to 11A Peak Output

Low Conduction Losses

Dual FETKY

Co-Packaged Dual MOSFET Plus Schottky Diode

•

Device Ratings (Typ.Values)

Low Switching Losses

Low Vf Schottky Rectifier

and Schottky

9.6 mΩ

18 nC

S1, D2

R_DS

Q_G

13.4 mΩ

13 nC

5.5 nC

1.0V

(on)

13 S1, D2

12 S1, D2

10 S1, D2

S1, D2

Q_sw

V_SD

6.4 nC

0.43V

S1, D2

Description

The FETKY^™family of Co-Pack HEXFET MOSFETs and Schottky diodes offers the designer an innovative,

board space saving solution for switching regulator and power management applications. Advanced

HEXFET MOSFETs combined with low forward drop Schottky results in an extremely efficient device suitable

for a wide variety of portable electronics applications.

The SO-14 has been modified through a customized leadframe for enhanced thermal characteristics and

multiple die capability making it ideal in a variety of power applications. With these improvements multiple

devices can be used in an application with dramatically reduced board space. Internal connections enable

easier board layout design with reduced stray inductance.

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-Source Voltage

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

8.1

2.0

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

1.3

Linear Derating Factor

0.02

W/°C

V_GS

Gate-to-Source Voltage

± 12

E_AS(6 sigma)

Single Pulse Avalanche Energy ꢀ

Operating Junction and

T_J

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

R_θJL

Junction-to-Drain Lead

R_θJA

Junction-to-Ambient

62.5

°C/W

Notes through ꢀare on page 12

9/11/02

12 3 4 5 6 7...12

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与IRF7335D1TRPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF7338	INFINEON	获取价格	HEXFET Power MOSFET
IRF7338PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF733FI	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 350V V(BR)DSS \| 3A I(D) \| TO-220AB
IRF733R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 350V V(BR)DSS \| 4.5A I(D) \| TO-220AB
IRF734	VISHAY	获取价格	Power MOSFET
IRF734-007PBF	VISHAY	获取价格	Power Field-Effect Transistor, 4.9A I(D), 450V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
IRF734-013PBF	VISHAY	获取价格	Power Field-Effect Transistor, 4.9A I(D), 450V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
IRF734-018	VISHAY	获取价格	Power Field-Effect Transistor, 4.9A I(D), 450V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
IRF734-018PBF	VISHAY	获取价格	Power Field-Effect Transistor, 4.9A I(D), 450V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
IRF734-019PBF	VISHAY	获取价格	Power Field-Effect Transistor, 4.9A I(D), 450V, 1.2ohm, 1-Element, N-Channel, Silicon, Met

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