Datasheet > IRF7338PBF

IRF7338PBF

更新时间： 2024-11-13 04:44:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	225K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRF7338PBF 数据手册

PD - 95197

IRF7338PbF

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l Dual N and P Channel MOSFET

l Surface Mount

l Available in Tape & Reel

l Lead-Free

N-CHANNEL MOSFET

N-Ch P-Ch

V_DSS12V

-12V

P-CHANNEL MOSFET

R_DS(on)0.034Ω 0.150Ω

Top View

Description

These N and P channel MOSFETs from International

Rectifierutilizeadvancedprocessingtechniquestoachieve

the extremely low on-resistance per silicon area. This

benefit provides the designer with an extremely efficient

device for use in battery and load management

applications.

This Dual SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of power

applications. With these improvements, multiple devices

can be used in an application with dramatically reduced

board space. The package is designed for vapor phase,

infrared, or wave soldering techniques.

SO-8

Absolute Maximum Ratings

Max.

Parameter

Units

N-Channel

P-Channel

-12

V_DS

Drain-to-Source Voltage

6.3

5.2

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 4.5V

-3.0

-2.5

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

-13

P_D@T_A= 25°C

P_D@T_A= 70°C

2.0

1.3

mW/°C

V_GS

Gate-to-Source Voltage

Junction and Storage Temperature Range

±12

± 8.0

T_J,T_STG

-55 to + 150

°C

Thermal Resistance

Symbol

R_θJL

Parameter

Junction-to-Drain Lead

Typ.

–––

Max.

Units

R_θJA

Junction-to-Ambient

–––

62.5

°C/W

www.irf.com

9/30/04

12 3 4 5 6 7...12

中文翻译

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