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IRF7338PBF

更新时间: 2024-11-13 04:44:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 225K
描述
HEXFET Power MOSFET

IRF7338PBF 数据手册

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PD - 95197  
IRF7338PbF  
HEXFET® Power MOSFET  
l Ultra Low On-Resistance  
l Dual N and P Channel MOSFET  
l Surface Mount  
l Available in Tape & Reel  
l Lead-Free  
N-CHANNEL MOSFET  
N-Ch P-Ch  
1
2
3
4
8
S1  
G1  
D1  
D1  
7
VDSS 12V  
-12V  
6
5
S2  
D2  
D2  
G2  
P-CHANNEL MOSFET  
RDS(on) 0.0340.150Ω  
Top View  
Description  
These N and P channel MOSFETs from International  
Rectifierutilizeadvancedprocessingtechniquestoachieve  
the extremely low on-resistance per silicon area. This  
benefit provides the designer with an extremely efficient  
device for use in battery and load management  
applications.  
This Dual SO-8 has been modified through a customized  
leadframe for enhanced thermal characteristics and  
multiple-die capability making it ideal in a variety of power  
applications. With these improvements, multiple devices  
can be used in an application with dramatically reduced  
board space. The package is designed for vapor phase,  
infrared, or wave soldering techniques.  
SO-8  
Absolute Maximum Ratings  
Max.  
Parameter  
Units  
N-Channel  
P-Channel  
-12  
VDS  
Drain-to-Source Voltage  
12  
6.3  
5.2  
26  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 4.5V  
Continuous Drain Current, VGS @ 4.5V  
-3.0  
A
-2.5  
Pulsed Drain Current  
Power Dissipation ƒ  
Power Dissipation ƒ  
Linear Derating Factor  

-13  
PD @TA = 25°C  
PD @TA = 70°C  
2.0  
1.3  
16  
W
mW/°C  
VGS  
Gate-to-Source Voltage  
Junction and Storage Temperature Range  
±12 „  
± 8.0  
V
TJ, TSTG  
-55 to + 150  
°C  
Thermal Resistance  
Symbol  
RθJL  
Parameter  
Junction-to-Drain Lead  
Typ.  
–––  
Max.  
20  
Units  
RθJA  
Junction-to-Ambient ƒ  
–––  
62.5  
°C/W  
www.irf.com  
1
9/30/04  

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