Datasheet > IRF7338

IRF7338

更新时间： 2024-11-12 21:55:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	193K
描述
HEXFET Power MOSFET

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数据手册

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IRF7338 数据手册

PD - 94372C

IRF7338

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l Dual N and P Channel MOSFET

l Surface Mount

N-CHANNEL MOSFET

N-Ch P-Ch

V_DSS12V

-12V

l Available in Tape & Reel

P-CHANNEL MOSFET

R_DS(on)0.034Ω 0.150Ω

Top View

Description

These N and P channel MOSFETs from International

Rectifierutilizeadvancedprocessingtechniquestoachieve

the extremely low on-resistance per silicon area. This

benefit provides the designer with an extremely efficient

device for use in battery and load management

applications.

This Dual SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of power

applications. With these improvements, multiple devices

can be used in an application with dramatically reduced

board space. The package is designed for vapor phase,

infrared, or wave soldering techniques.

SO-8

Absolute Maximum Ratings

Max.

Parameter

Units

N-Channel

P-Channel

-12

V_DS

Drain-to-Source Voltage

6.3

5.2

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 4.5V

Pulsed Drain Current

Power Dissipation

-3.0

-2.5

-13

P_D@T_A= 25°C

P_D@T_A= 70°C

2.0

1.3

Power Dissipation

Linear Derating Factor

mW/°C

V_GS

Gate-to-Source Voltage

±12

± 8.0

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Symbol

R_θJL

R_θJA

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

–––

62.5

°C/W

www.irf.com

6/2/03

12 3 4 5 6 7...12

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