Datasheet > 晶体管 > 小信号场效应晶体管> IRF7335D1PBF

IRF7335D1PBF

更新时间： 2024-11-13 04:44:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体肖特基二极管小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
12页	242K
描述
Dual FETKY Co-Packaged Dual MOSFET Plus Schottky Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF7335D1PBF 数据手册

PD-95272

IRF7335D1PbF

•

Co-Pack Dual N-channel HEXFET^®Power MOSFET

and Schottky Diode

Ideal for Synchronous Buck DC-DC

Converters Up to 11A Peak Output

Low Conduction Losses

Low Switching Losses

Low Vf Schottky Rectifier

Lead-Free

Dual FETKY

Co-Packaged Dual MOSFET Plus Schottky Diode

•

Device Ratings (Typ.Values)

and Schottky

S1, D2

13 S1, D2

12 S1, D2

R_DS(on)

Q_G

13.4 mΩ

13 nC

5.5 nC

1.0V

9.6 mΩ

18 nC

6.4 nC

0.43V

10 S1, D2

S1, D2

Q_sw

V_SD

Description

The FETKY^™family of Co-Pack HEXFET^®MOSFETs and Schottky diodes offers the designer an innovative, board space

saving solution for switching regulator and power management applications. Advanced HEXFET^®MOSFETs combined

with low forward drop Schottky results in an extremely efficient device suitable for a wide variety of portable electronics

applications.

The SO-14 has been modified through a customized leadframe for enhanced thermal characteristics and multiple die

capability making it ideal in a variety of power applications. With these improvements multiple devices can be used in an

application with dramatically reduced board space. Internal connections enable easier board layout design with reduced

stray inductance.

AbsoluteMaximumRatings

Parameter

Max.

Units

V_DS

Drain-Source Voltage

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

8.1

2.0

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

1.3

Linear Derating Factor

0.02

W/°C

V_GS

Gate-to-Source Voltage

± 12

E_AS(6 sigma)

Single Pulse Avalanche Energy ꢀ

Operating Junction and

T_J

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

R_θJL

Junction-to-Drain Lead

R_θJA

Junction-to-Ambient

62.5

°C/W

Notes through ꢀare on page 12

08/16/06

12 3 4 5 6 7...12

中文翻译

下载PDF

与IRF7335D1PBF相关器件

型号	品牌	获取价格	描述	数据表
IRF7335D1TRPBF	INFINEON	获取价格	Small Signal Field-Effect Transistor, 10A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-
IRF7338	INFINEON	获取价格	HEXFET Power MOSFET
IRF7338PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF733FI	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 350V V(BR)DSS \| 3A I(D) \| TO-220AB
IRF733R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 350V V(BR)DSS \| 4.5A I(D) \| TO-220AB
IRF734	VISHAY	获取价格	Power MOSFET
IRF734-007PBF	VISHAY	获取价格	Power Field-Effect Transistor, 4.9A I(D), 450V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
IRF734-013PBF	VISHAY	获取价格	Power Field-Effect Transistor, 4.9A I(D), 450V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
IRF734-018	VISHAY	获取价格	Power Field-Effect Transistor, 4.9A I(D), 450V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
IRF734-018PBF	VISHAY	获取价格	Power Field-Effect Transistor, 4.9A I(D), 450V, 1.2ohm, 1-Element, N-Channel, Silicon, Met

与IRF7335D1PBF相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

25
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

10
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

11
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

IRF7335D1PBF

IRF7335D1PBF 数据手册

与IRF7335D1PBF相关器件

与IRF7335D1PBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRF7335D1PBF

IRF7335D1PBF 数据手册

与IRF7335D1PBF相关器件

与IRF7335D1PBF相关文章

您还可以找

您在本页遇到什么问题？