5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率场效应晶体管> IRF630N
IRF630N PDF预览

IRF630N

更新时间： 2024-09-24 22:31:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关局域网
页数 文件大小 规格书
11页 155K
描述
Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)

阅读下载

中文翻译

获取价格

IRF630N 数据手册

 浏览型号IRF630N的Datasheet PDF文件第2页浏览型号IRF630N的Datasheet PDF文件第3页浏览型号IRF630N的Datasheet PDF文件第4页浏览型号IRF630N的Datasheet PDF文件第5页浏览型号IRF630N的Datasheet PDF文件第6页浏览型号IRF630N的Datasheet PDF文件第7页 
PD - 94005A  
IRF630N  
IRF630NS  
IRF630NL  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Dynamic dv/dt Rating  
l 175°C Operating Temperature  
l Fast Switching  
D
VDSS = 200V  
l Fully Avalanche Rated  
l Ease of Paralleling  
RDS(on) = 0.30Ω  
G
l Simple Drive Requirements  
Description  
ID = 9.3A  
Fifth Generation HEXFET® Power MOSFETs from  
S
International Rectifier utilize advanced processing  
techniques to achieve extremely low on-resistance per  
silicon area. This benefit, combined with the fast switching  
speed and ruggedized device design that HEXFET Power  
MOSFETs are well known for, provides the designer with an  
extremely efficient and reliable device for use in a wide  
variety of applications.  
The TO-220 package is universally preferred for all  
commercial-industrialapplicationsatpowerdissipationlevels  
to approximately 50 watts. The low thermal resistance and  
low package cost of the TO-220 contribute to its wide  
acceptance throughout the industry.  
The D2Pak is a surface mount power package capable of  
accommodating die sizes up to HEX-4. It provides the  
highest power capability and the lowest possible on-  
resistance in any existing surface mount package. The  
D2Pak is suitable for high current applications because of its  
low internal connection resistance and can dissipate up to  
2.0W in a typical surface mount application.  
D2Pak  
IRF630NS  
TO-262  
IRF630NL  
TO-220AB  
IRF630N  
The through-hole version (IRF630NL) is available for low-  
profile application.  
Absolute Maximum Ratings  
Parameter  
Max.  
9.3  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
6.5  
A
37  
PD @TC = 25°C  
Power Dissipation  
82  
W
W/°C  
V
Linear Derating Factor  
0.5  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
±20  
94  
Single Pulse Avalanche Energy‚  
Avalanche Current  
mJ  
A
9.3  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt †  
Operating Junction and  
8.2  
mJ  
V/ns  
8.1  
-55 to +175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 srew„  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
www.irf.com  
1
10/11/00  
1234567...11

中文翻译

下载PDF

IRF630N 替代型号

型号 品牌 替代类型 描述 数据表
IRF630NPBF INFINEON

功能相似

 HEXFET Power MOSFET
IRF632 FAIRCHILD

功能相似

 N-Channel Power MOSFETs, 12A, 150-200 V
BUZ32 INFINEON

功能相似

 SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

与IRF630N相关器件

型号 品牌 获取价格 描述 数据表
IRF630N_04 INFINEON

获取价格

 		HEXFET Power MOSFET
IRF630NL TRSYS

获取价格

 		Power MOSFET
IRF630NL INFINEON

获取价格

 		Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)
IRF630NL FAIRCHILD

获取价格

 		N-Channel Power MOSFETs 200V, 9.3A, 0.30з
IRF630NLPBF INFINEON

获取价格

 		HEXFET Power MOSFET
IRF630NPBF INFINEON

获取价格

 		HEXFET Power MOSFET
IRF630NPBF_15 INFINEON

获取价格

 		Advanced Process Technology
IRF630NS FAIRCHILD

获取价格

 		N-Channel Power MOSFETs 200V, 9.3A, 0.30з
IRF630NS INFINEON

获取价格

 		Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)
IRF630NS TRSYS

获取价格

 		Power MOSFET

与IRF630N相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证