5秒后页面跳转
BUZ32 PDF预览

BUZ32

更新时间: 2024-11-11 22:16:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
9页 198K
描述
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ32 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:GREEN, PLASTIC, TO-220, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.13
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):120 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):9.5 A
最大漏极电流 (ID):9.5 A最大漏源导通电阻:0.4 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):75 W
最大脉冲漏极电流 (IDM):38 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

BUZ32 数据手册

 浏览型号BUZ32的Datasheet PDF文件第2页浏览型号BUZ32的Datasheet PDF文件第3页浏览型号BUZ32的Datasheet PDF文件第4页浏览型号BUZ32的Datasheet PDF文件第5页浏览型号BUZ32的Datasheet PDF文件第6页浏览型号BUZ32的Datasheet PDF文件第7页 
BUZ 32  
®
SIPMOS Power Transistor  
• N channel  
• Enhancement mode  
• Avalanche-rated  
Pin 1  
Pin 2  
Pin 3  
G
D
S
Type  
V
DS  
I
R
)
DS(on  
Package  
Ordering Code  
D
BUZ 32  
200 V  
9.5 A  
0.4 Ω  
TO-220 AB  
C67078-S1310-A2  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Continuous drain current  
I
I
I
A
D
T = 29 °C  
C
9.5  
Pulsed drain current  
Dpuls  
AR  
T = 25 °C  
C
38  
Avalanche current,limited by T  
9.5  
6.5  
jmax  
Avalanche energy,periodic limited by T  
Avalanche energy, single pulse  
E
mJ  
jmax  
AR  
AS  
E
I = 9.5 A, V = 50 V, R = 25 Ω  
D
DD  
GS  
L = 2 mH, T = 25 °C  
120  
j
±
Gate source voltage  
Power dissipation  
V
P
20  
V
GS  
W
tot  
T = 25 °C  
C
75  
Operating temperature  
Storage temperature  
T
T
-55 ... + 150 °C  
-55 ... + 150  
j
stg  
Thermal resistance, chip case  
R
1.67  
K/W  
thJC  
thJA  
Thermal resistance, chip to ambient  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
R
75  
E
55 / 150 / 56  
Semiconductor Group  
1
07/96  

BUZ32 替代型号

型号 品牌 替代类型 描述 数据表
IRF630NPBF INFINEON

类似代替

HEXFET Power MOSFET
BUZ73 INFINEON

类似代替

SIPMOS Power Transistor
IRF630N INFINEON

功能相似

Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)

与BUZ32相关器件

型号 品牌 获取价格 描述 数据表
BUZ323 INFINEON

获取价格

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ325 INFINEON

获取价格

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ326 INFINEON

获取价格

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ32CHIP ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.5A I(D) | CHIP
BUZ32-E3044 INFINEON

获取价格

Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
BUZ32-E3045 INFINEON

获取价格

Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
BUZ32-E3046 INFINEON

获取价格

Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
BUZ32H INFINEON

获取价格

SIPMOS Power Transistor
BUZ32H3045A INFINEON

获取价格

SIPMOS Power Transistor
BUZ32SMD INFINEON

获取价格

SIPMOS Power Transistor