生命周期: | Transferred | 零件包装代码: | TO-220AB |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.29 | 雪崩能效等级(Eas): | 120 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (ID): | 9.5 A | 最大漏源导通电阻: | 0.4 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 70 pF |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 75 W |
最大脉冲漏极电流 (IDM): | 38 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 115 ns |
最大开启时间(吨): | 75 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUZ32-E3046 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met |
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BUZ32H | INFINEON |
获取价格 |
SIPMOS Power Transistor |
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BUZ32H3045A | INFINEON |
获取价格 |
SIPMOS Power Transistor |
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BUZ32SMD | INFINEON |
获取价格 |
SIPMOS Power Transistor |
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BUZ330 | INFINEON |
获取价格 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
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BUZ330 | MOTOROLA |
获取价格 |
9.5A, 500V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC |
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BUZ330 | NJSEMI |
获取价格 |
Trans MOSFET N-CH 500V 9.5A 3-Pin(3+Tab) TO-218 |
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BUZ330C67078-S3105-A2 | INFINEON |
获取价格 |
TRANSISTOR MOSFET TO 247 |
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BUZ331 | INFINEON |
获取价格 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
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BUZ331 | ROCHESTER |
获取价格 |
8A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 |
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