Datasheet > IRF630N_04

IRF630N_04

更新时间： 2024-02-20 14:34:44

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	241K
描述
HEXFET Power MOSFET

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数据手册

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IRF630N_04 数据手册

PD - 94005B

IRF630N

IRF630NS

IRF630NL

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Ease of Paralleling

HEXFET^®Power MOSFET

V_DSS= 200V

R_DS(on)= 0.30Ω

l Simple Drive Requirements

Description

Fifth Generation HEXFET^®Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer with an

extremely efficient and reliable device for use in a wide

variety of applications.

I_D= 9.3A

The TO-220 package is universally preferred for all

commercial-industrialapplicationsatpowerdissipationlevels

to approximately 50 watts. The low thermal resistance and

low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of its

low internal connection resistance and can dissipate up to

2.0W in a typical surface mount application.

D²Pak

IRF630NS

TO-262

IRF630NL

TO-220AB

IRF630N

The through-hole version (IRF630NL) is available for low-

profile application.

Absolute Maximum Ratings

Parameter

Max.

9.3

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

6.5

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.5

V_GS

E_AS

I_AR

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy

Avalanche Current

9.3

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

8.2

V/ns

8.1

-55 to +175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

www.irf.com

10/08/04

12 3 4 5 6 7...11

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与IRF630N_04相关器件

型号	品牌	获取价格	描述	数据表
IRF630NL	TRSYS	获取价格	Power MOSFET
IRF630NL	INFINEON	获取价格	Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)
IRF630NL	FAIRCHILD	获取价格	N-Channel Power MOSFETs 200V, 9.3A, 0.30з
IRF630NLPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF630NPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF630NPBF_15	INFINEON	获取价格	Advanced Process Technology
IRF630NS	FAIRCHILD	获取价格	N-Channel Power MOSFETs 200V, 9.3A, 0.30з
IRF630NS	INFINEON	获取价格	Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)
IRF630NS	TRSYS	获取价格	Power MOSFET
IRF630NSL86Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Met