Datasheet > IPB200N15N3

IPB200N15N3

更新时间： 2024-11-05 05:39:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体栅极晶体管
页数	文件大小	规格书
12页	551K
描述
OptiMOS™3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

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数据手册

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IPB200N15N3 数据手册

IPB200N15N3 G IPD200N15N3 G

IPI200N15N3 G IPP200N15N3 G

OptiMOS^™3 Power-Transistor

Product Summary

Features

V _DS

150

• N-channel, normal level

R _DS(on),max

I _D

mΩ

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target application

• Ideal for high-frequency switching and synchronous rectification

• Halogen-free according to IEC61249-2-21 *

Type

IPB200N15N3 G

IPD200N15N3 G

IPI200N15N3 G

IPP200N15N3 G

Package

Marking

PG-TO263-3

200N15N

PG-TO252-3

200N15N

PG-TO262-3

200N15N

PG-TO220-3

200N15N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

Continuous drain current

Pulsed drain current²⁾

I _D,pulse

E _AS

200

170

I _D=50 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=50 A, V _DS=120 V,

di /dt =100 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=175 °C

V _GS

Gate source voltage

±20

P _tot

T _C=25 °C

Power dissipation

150

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

¹⁾J-STD20 and JESD22

²⁾See figure 3

* Except D-PAK ( TO-252 )

Rev. 2.05

page 1

2010-04-28

12 3 4 5 6 7...12

中文翻译

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