是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.24 | 其他特性: | HIGH SPEED |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 50 A |
集电极-发射极最大电压: | 400 V | 配置: | SINGLE WITH BUILT-IN DIODE |
最大降落时间(tf): | 400 ns | 门极-发射极最大电压: | 25 V |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 130 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 540 ns | 标称接通时间 (ton): | 430 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GT50J101 | TOSHIBA |
获取价格 |
TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, TO-3PL, TO-3PL, 3 PIN, Insulated Gate BIP Transist | |
GT50J102 | TOSHIBA |
获取价格 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | |
GT50J121 | TOSHIBA |
获取价格 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | |
GT50J121_06 | TOSHIBA |
获取价格 |
Silicon N Channel IGBT High Power Switching Applications | |
GT50J122 | TOSHIBA |
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Current Resonance Inverter Switching Application | |
GT50J123 | TOSHIBA |
获取价格 |
Insulated Gate Bipolar Transistor | |
GT50J301 | TOSHIBA |
获取价格 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | |
GT50J322 | TOSHIBA |
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N CHANNEL MOS TYPE (THE 4TH CENERATION CURRENT RESONACE INVERTER SWITHCING APPLICATIONS) | |
GT50J322_06 | TOSHIBA |
获取价格 |
SILICON N CHANNEL IGBT FOURTH GENERATION IGBT | |
GT50J325 | TOSHIBA |
获取价格 |
Silicon N Channel IGBT High Power Switching Applications |