Datasheet > GT50J327

GT50J327

更新时间： 2024-01-12 10:13:31

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体开关晶体管双极性晶体管栅
页数	文件大小	规格书
6页	159K
描述
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application

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GT50J327 数据手册

GT50J327

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT50J327

Current Resonance Inverter Switching Application

Unit: mm

•

Enhancement mode type

High speed : t = 0.19 µs (typ.) (I = 50A)

Low saturation voltage: V

= 1.9 V (typ.) (I = 50A)

CE (sat)

FRD included between emitter and collector

Fourth generation IGBT

TO-3P(N) (Toshiba package name)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-emitter voltage

Gate-emitter voltage

600

±25

CES

1.Gate

2.Collector(heatsink)

3.Emitter

GES

@ Tc = 100°C

Continuous collector

current

@ Tc = 25°C

Pulsed collector current

100

JEDEC

JEITA

Diode forward current

Pulsed

TOSHIBA

2-16C1C

@ Tc = 100°C

Collector power

Weight: 4.6 g (typ.)

dissipation

@ Tc = 25°C

140

150

−55 to 150

Junction temperature

°C

Storage temperature range

stg

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance (IGBT)

Thermal resistance (diode)

0.89

2.7

°C/W

th (j-c)

Equivalent Circuit

Marking

Collector

Part No. (or abbreviation code)

TOSHIBA

GT50J327

Gate

Lot No.

Emitter

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2005-02-09

12 3 4 5 6

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