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GT50J342

更新时间： 2024-11-19 14:57:27

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GT50J342 技术参数

GT50J342

Discrete IGBTs Silicon N-Channel IGBT

GT50J342

1. Applications

•

Motor Drivers

2. Features

(1) Sixth generation

(2) Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 50 A)

(3) High junction temperature: Tj = 175 (max)

(4) FRD included between emitter and collector

3. Packaging and Internal Circuit

1: Gate

2: Collector (Heat sink)

3: Emitter

TO-3P(N)

Start of commercial production

2012-12

2014-01-07

Rev.2.0

12 3 4 5 6 7...10

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