Datasheet > GT50PI120T6H-T4M

GT50PI120T6H-T4M

更新时间： 2024-09-24 17:15:39

品牌	Logo	应用领域
银茂微 - SILVERMICRO		双极性晶体管
页数	文件大小	规格书
13页	1149K
描述
PIM IGBT-1200V

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中文翻译

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数据手册

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GT50PI120T6H-T4M 数据手册

GT50PI120T6H-T4M

IGBT Module

Features：

Field Stop Trench Gate IGBT

Short Circuit Rated>10μs

Low Saturation Voltage

Low Switching Loss

100% RBSOA Tested（2×Ic）

Low Stray Inductance

Lead Free, Compliant with RoHS Requirement

Applications：

Industrial Inverters

Servo Applications

IGBT, Inverter

Maximum Rated Values(T_C=25℃unless otherwise specified)

V_CES

V_GES

Collector-Emitter Blocking Voltage

Gate-Emitter Voltage

1200

±20

T_C=100℃

T_C=25℃

T_J=175℃

I_C

Continuous Collector Current

100

>10

398

I_CM

t_SC

P_D

Peak Collector Current Repetitive

Short Circuit Withstand Time

μs

T_C=25℃

T_Jmax=175℃

Maximum Power Dissipation (IGBT)

www.njsme.com

Page 1 Rev.A

09/12/2019

12 3 4 5 6 7...13

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