Datasheet > GT50J341,Q

GT50J341,Q

更新时间： 2024-01-02 04:33:47

品牌	Logo	应用领域
东芝 - TOSHIBA		栅
页数	文件大小	规格书
9页	245K
描述
Insulated Gate Bipolar Transistor

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GT50J341,Q 技术参数

GT50J341

Discrete IGBTs Silicon N-Channel IGBT

GT50J341

1. Applications

•

Dedicated to Current-Resonant Inverter Switching Applications

Note: The product(s) described herein should not be used for any other application.

2. Features

(1) Sixth generation

(2) Enhancement mode

(3) High-speed switching: tf = 0.15 µs (typ.) (IC = 50 A)

(4) Low saturation voltage: VCE(sat) = 1.6 V (typ.) (IC = 50 A)

(5) FRD included between emitter and collector

3. Packaging and Internal Circuit

1: Gate

2: Collector

3: Emitter

TO-3P(N)

Start of commercial production

2010-06

2014-01-07

Rev.3.0

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
GT50J342	TOSHIBA	获取价格	EOL announced
GT50JR21	TOSHIBA	获取价格	600 V/50 A IGBT, Built-in Diodes, TO-3P(N)
GT50JR22	TOSHIBA	获取价格	600 V/50 A IGBT, Built-in Diodes, TO-3P(N)
GT50MR21	TOSHIBA	获取价格	Discrete IGBTs Silicon N-Channel IGBT
GT50N321	TOSHIBA	获取价格	Bipolar Small-Signal Transistors
GT50N322A	TOSHIBA	获取价格	TRANSISTOR 50 A, 1000 V, N-CHANNEL IGBT, LEAD FREE, 2-16C1C, 3 PIN, Insulated Gate BIP Tra
GT50N324	TOSHIBA	获取价格	Bipolar Small-Signal Transistors
GT50NR21	TOSHIBA	获取价格	1050 V/50 A IGBT, Built-in Diodes, TO-3P(N)
GT50PI120T5H-M	SILVERMICRO	获取价格	PIM IGBT-1200V
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