Datasheet > GT50JR22

GT50JR22

更新时间： 2024-11-19 14:56:55

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GT50JR22 数据手册

GT50JR22

Discrete IGBTs Silicon N-Channel IGBT

GT50JR22

1. Applications

•

Dedicated to Current-Resonant Inverter Switching Applications

Note: The product(s) described herein should not be used for any other application.

2. Features

(1) 6.5th generation

(2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip.

(3) Enhancement mode

(4) High-speed switching

IGBT : tf = 0.05 µs (typ.) (IC = 50 A)

FWD : trr = 0.35 µs (typ.) (IF = 15 A)

(5) Low saturation voltage : VCE(sat) = 1.55 V (typ.) (IC = 50 A)

(6) High junction temperature : Tj = 175 (max)

3. Packaging and Internal Circuit

1: Gate

2: Collector

3: Emitter

TO-3P(N)

Start of commercial production

2012-03

2014-01-06

Rev.2.0

12 3 4 5 6 7

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