Datasheet > GT50MR21

GT50MR21

更新时间： 2024-01-28 00:29:37

品牌	Logo	应用领域
东芝 - TOSHIBA		双极性晶体管
页数	文件大小	规格书
8页	219K
描述
Discrete IGBTs Silicon N-Channel IGBT

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GT50MR21 数据手册

GT50MR21

Discrete IGBTs Silicon N-Channel IGBT

GT50MR21

1. Applications

•

Dedicated to Voltage-Resonant Inverter Switching Applications

Note: The product(s) described herein should not be used for any other application.

2. Features

(1) 6.5th generation

(2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip.

(3) Enhancement mode

(4) High-speed switching

IGBT : tf = 0.18 µs (typ.) (IC = 50 A)

FWD : trr = 0.45 µs (typ.) (IF = 15 A)

(5) Low saturation voltage : VCE(sat) = 1.7 V (typ.) (IC = 50 A)

(6) High junction temperature : Tj = 175 (max)

3. Packaging and Internal Circuit

1: Gate

2: Collector

3: Emitter

TO-3P(N)

2011-06-10

Rev.1.0

12 3 4 5 6 7 8

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